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J113-TA

更新时间: 2024-11-14 21:01:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 62K
描述
Transistor

J113-TA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.88FET 技术:JUNCTION
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.4 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

J113-TA 数据手册

 浏览型号J113-TA的Datasheet PDF文件第2页浏览型号J113-TA的Datasheet PDF文件第3页浏览型号J113-TA的Datasheet PDF文件第4页浏览型号J113-TA的Datasheet PDF文件第5页 
Si9428DY  
Vishay Siliconix  
N-Channel 2.5-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.03 @ V = 4.5 V  
6
GS  
20  
0.04 @ V = 2.5 V  
GS  
5.2  
D
1
D
1
SO-8  
D
D
D
D
1
2
3
4
8
7
6
5
S
S
S
G
1
G
Top View  
S
1
Ordering Information: Si9428DY  
Si9428DY-T1 (with Tape and Reel)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"8  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
6
A
a, b  
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
4.8  
A
Pulsed Drain Current  
I
20  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
1.7  
T
= 25_C  
= 70_C  
2.5  
A
a, b  
Maximum Power Dissipation  
P
D
W
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v10 sec  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
_
C/W  
Steady State  
70  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v10 sec.  
Document Number: 70810  
S-03950—Rev. C, 26-May-03  
www.vishay.com  
1
 

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