IX4351NE
9A Low Side SiC
MOSFET & IGBT Driver
INTEGRATED
C
IRCUITS
D
IVISION
Features
Description
• Separate 9A peak source and sink outputs
• Operating Voltage Range: -10V to +25V
• Internal negative charge pump regulator for
selectable negative gate drive bias
• Desaturation detection with soft shutdown sink driver
• TTL and CMOS compatible input
• Under Voltage lockout (UVLO)
The IX4351NE is designed specifically to drive SiC
MOSFETs and high power IGBTs. Separate 9A
source and sink outputs allow for tailored turn-on and
turn-off timing while minimizing switching losses. An
internal negative charge regulator provides a
selectable negative gate drive bias for improved dV/dt
immunity and faster turn-off.
• Thermal shutdown
• Open drain FAULT output
Desaturation detection circuitry detects an over
current condition of the SiC MOSFET and initiates a
soft turn off, thus preventing a potentially damaging
dV/dt event. The logic input is TTL and CMOS
compatible; this input does not need to be level shifted
even with a negative gate drive bias voltage.
Protection features include UVLO and thermal
shutdown detection. An open drain FAULT output
signals a fault condition to the microcontroller.
Applications
• Driving SiC MOSFETs and IGBTs
• On-board charger and DC charging station
• Industrial inverters
• PFC, AC/DC and DC/DC converters
IX4351 Functional Block Diagram
The IX4351NE is rated for operational temperature
range of -40°C to +125°C,and is available in a
thermally enhanced 16-pin power SOIC package.
VDD
4
DESAT
Ordering Information
6
IN
6.8V
VDD
VDD
2
3
Part
Description
16-Pin power SOIC with exposed thermal pad.
In tubes (50/Tube)
Gate and
Control
Logic
OUTSRC
1
IX4351NE
5
16
FAULT
OUTSNK
16-Pin power SOIC with exposed thermal pad.
In Tape & Reel (2000/Reel)
VSS
10 VSS
15
IX4351NETR
14 OUTSOFT
VDD
VSS
4.6V
Regulator
13
INSOFT
VREG
8
2.6V
VDD
Charge
Pump
Control
9
CAP
SET
12
11 GND
COM
7
DS-IX4351NE-R01
www.ixysic.com
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