Datasheet > IX4R11S3

IX4R11S3

更新时间： 2024-09-14 22:12:43

品牌	Logo	应用领域
IXYS		驱动器接口集成电路光电二极管
页数	文件大小	规格书
6页	616K
描述
4A Half-Bridge Driver

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IX4R11S3 数据手册

IX4R11

4A Half-Bridge Driver

Preliminary Data Sheet

Features

General Description

• Floating High Side Driver with boot-strap Power

supply along with a Low Side Driver.

• Fully operational to 650V

The IX4R11 Bridge Driver for N-channel MOSFETs and IGBTs

with a high side and low side output, whose input signals

reference the low side. The High Side driver can control a

MOSFET or IGBT connected to a positive buss voltage up to

650V. The logic input stages are compatible with TTL or

CMOS, have built-in hysteresis and are fully immune to latch

up over the entire operating range. The IX4R11 can withstand

dV/dt on the output side up to ± 50V/ns.

• ± 50V/ns dV/dt immunity

• Gate drive power supply range: 10 - 35V

• Undervoltage lockout for both output drivers

• Separate Logic power supply range: 3.3V to V_CL

• Built using the advantages and compatibility

of CMOS and IXYS HDMOS^TMprocesses

• Latch-Up protected over entire

The IX4R11 comes in either the 16-PIN SOIC package

(IX4R11S3) or the 14-PIN DIP through-hole package

(IX4R11P7)

operating range

• High peak output current: 4A

• Matched propagation delay for both outputs

• Low output impedance

• Low power supply current

Applications

• Immune to negative voltage transients

• Driving MOSFETs and IGBTs in half-bridge circuits

• High voltage, high side and low side drivers

• Motor Controls

• Switch Mode Power Supplies (SMPS)

• DC to DC Converters

Warning: The IX4R11 is ESD sensitive.

Figure 1. Typical Circuit Connection

• Class D Switching Amplifiers

DS99164A(08/04)

First Release

12 3 4 5 6

中文翻译

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