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IT1750 PDF预览

IT1750

更新时间: 2024-11-17 22:47:59
品牌 Logo 应用领域
CALOGIC 晶体开关放大器小信号场效应晶体管
页数 文件大小 规格书
1页 21K
描述
N-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch

IT1750 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.38
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:25 V最大漏极电流 (ID):0.1 A
最大漏源导通电阻:50 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):1.6 pFJEDEC-95代码:TO-72
JESD-30 代码:O-MBCY-W4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.375 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IT1750 数据手册

  
N-Channel  
Enhancement Mode MOSFET  
General Purpose Amplifier Switch  
CORPORATION  
IT1750  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise specified)  
Low ON Resistance  
Low Cdg  
High Gain  
Low Threshold Voltage  
Drain-Source and Gate-Source Voltage . . . . . . . . . . . . . . 25V  
Peak Gate-Source Voltage (Note 1) . . . . . . . . . . . . . . . ±125V  
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -65oC to +150oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW  
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 3mW/oC  
PIN CONFIGURATION  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
TO-72  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
IT1750  
XIT1750  
Hermetic TO-72  
Sorted Chips in Carriers  
-55oC to +150oC  
C
D
-55oC to +150oC  
S
G
1003  
ELECTRICAL CHARACTERISTICS (TA = 25oC, Body connected to Source and VBS = 0 unless otherwise specified)  
SYMBOL  
PARAMETER  
MIN  
MAX  
3.0  
UNITS  
V
TEST CONDITIONS  
VDS = VGS, ID = 10µA  
VGS(th)  
Gate to Source Threshold Voltage  
0.50  
IDSS  
IGSS  
BVDSS  
rDS(on)  
ID(on)  
Yfs  
Drain Leakage Current  
Gate Leakage Current  
Drain Breakdown Voltage  
Drain to Source on Resistance  
Drain Current  
VDS = 10V, VGS = 0  
10  
nA  
(See note 2)  
25  
V
ohms  
mA  
µS  
ID = 10µA, VGS = 0  
VGS = 20V  
50  
VDS = VGS =10V  
10  
Forward Transadmittance  
Total Gate Input Capacitance  
Gate to Drain Capacitance  
VDS = 10V, ID = 10mA, f = 1kHz  
ID = 10mA, VDS = 10V, f = 1MHz (Note 3)  
VDG = 10V, f = 1MHz (Note 3)  
3,000  
Ciss  
6.0  
1.6  
pF  
Cdg  
pF  
NOTES: 1. Devices must not be tested at ±125V more than once nor longer than 300ms.  
2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.  
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.  
3. For design reference only, not 100% tested.  

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