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IT130A-P-DIP PDF预览

IT130A-P-DIP

更新时间: 2024-11-02 06:37:15
品牌 Logo 应用领域
凌特 - Linear 光电二极管晶体管
页数 文件大小 规格书
2页 283K
描述
Small Signal Bipolar Transistor, 0.01A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, PLASTIC, DIP-8

IT130A-P-DIP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Contact Manufacturer零件包装代码:DIP
包装说明:IN-LINE, R-PDIP-T8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.3
Is Samacsys:N最大集电极电流 (IC):0.01 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):225JESD-30 代码:R-PDIP-T8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
Base Number Matches:1

IT130A-P-DIP 数据手册

 浏览型号IT130A-P-DIP的Datasheet PDF文件第2页 
IT130A IT130 IT131 IT132  
MONOLITHIC DUAL  
PNP  
TRANSISTORS  
FEATURES  
Direct Replacement for Intersil IT130 Series  
Pin for Pin Compatible  
C1  
C2  
ABSOLUTE MAXIMUM RATINGS NOTE 1  
(TA= 25°C unless otherwise noted)  
IC  
Collector-Current  
-10mA  
Maximum Temperatures  
Storage Temperature Range  
Operating Junction Temperature  
Maximum Power Dissipation  
Device Dissipation TA=25°C  
Linear Derating Factor  
-65°C to +150°C  
-55°C to +150°C  
B1  
E1 E2  
26 X 29 MILS  
B2  
ONE SIDE  
BOTH SIDES  
500mW  
TOP VIEW  
250mW  
2.3mW/°C  
4.3W/°C  
ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted)  
SYMBOL CHARACTERISTIC IT130A IT130 IT131 IT132  
UNITS CONDITIONS  
BVCBO  
BVCEO  
BVEBO  
BVCCO  
hFE  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter-Base Breakdown Voltage  
Collector to Collector Voltage  
DC Current Gain  
-45  
-45  
-6.2  
±60  
200  
225  
-0.5  
-1  
-45  
-45  
-45  
-45  
-45 MIN.  
-45 MIN.  
V
V
V
V
IC = -10µA IE = 0A  
IC = -10µA IB = 0A  
IE = -10µA IC = 0A NOTE 2  
ICCO = ±10µA IB= IE=0A  
IC = -10µA VCE = -5V  
IC = -1.0mA VCE = -5V  
IC = -0.5mA IB = -0.05mA  
-6.2 -6.2 -6.2 MIN.  
±60  
200  
225  
±60  
80  
±60 MIN.  
80 MIN.  
100 MIN.  
100  
VCE(SAT) Collector Saturation Voltage  
-0.5 -0.5 -0.5 MAX.  
V
IEBO  
ICBO  
COBO  
CC1C2  
IC1C2  
fT  
Emitter Cutoff Current  
-1  
-1  
2
-1  
-1  
2
-1  
-1  
2
MAX. nA  
MAX. nA  
MAX. pF  
MAX. pF  
IC = 0A  
IE = 0A  
IE = 0A  
VCC = 0V  
VEB = -3V  
VCB = -45V  
VCB = -5V  
Collector Cutoff Current  
Output Capacitance4  
Collector to Collector Capacitance4  
-1  
2
4
4
4
4
Collector to Collector Leakage Current ±500 ±500 ±500 ±500 MAX. nA  
Current Gain Bandwidth Product4  
Narrow Band Noise Figure4  
VCC = ±60V, IB= IE=0A  
IC = -1mA VCE = -5V  
IC = -100µA VCE = -5V  
BW = 200Hz, RG = 10 KΩ  
f=1KHz  
110  
3
110  
3
90  
3
90  
3
MIN. MHz  
MAX. dB  
NF  
Linear Integrated Systems  
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  
Doc 201157 9/27/2012 Rev#A5 ECN# IT130 IT130A IT131 IT132  

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