Datasheet > ISL95808HRZ-T

ISL95808HRZ-T

更新时间： 2024-02-26 02:44:03

品牌	Logo	应用领域
英特矽尔 - INTERSIL		开关光电二极管
页数	文件大小	规格书
9页	294K
描述
Three-state PWM input for power stage shutdown

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技术参数
数据手册

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ISL95808HRZ-T 技术参数

生命周期：	Unknown	零件包装代码：	DFN
包装说明：	HVSON,	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	Factory Lead Time：	10 weeks
风险等级：	5.73	模拟集成电路 - 其他类型：	SWITCHING CONTROLLER
控制技术：	PULSE WIDTH MODULATION	最大输入电压：	5.25 V
最小输入电压：	4.75 V	标称输入电压：	5 V
JESD-30 代码：	S-PDSO-N8	JESD-609代码：	e3
长度：	2 mm	湿度敏感等级：	1
功能数量：	1	端子数量：	8
最高工作温度：	100 °C	最低工作温度：	-10 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	HVSON
封装形状：	SQUARE	封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度：	1 mm	表面贴装：	YES
切换器配置：	BUCK	最大切换频率：	2000 kHz
温度等级：	OTHER	端子面层：	Matte Tin (Sn) - annealed
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	DUAL	宽度：	2 mm
Base Number Matches：	1

ISL95808HRZ-T 数据手册

DATASHEET

High Voltage Synchronous Rectified Buck MOSFET Driver

ISL95808

Features

The ISL95808 is a high frequency, dual MOSFET driver with low

shutdown current, optimized to drive two N-Channel power

MOSFETs in a synchronous-rectified buck converter topology. It

is especially suited for mobile computing applications that

require high efficiency and excellent thermal performance. The

driver, combined with an Intersil multiphase Buck PWM

controller, forms a complete single-stage core-voltage

regulator solution for advanced mobile microprocessors.

• Dual MOSFET drivers for synchronous rectified bridge

• Adaptive shoot-through protection

• 0.5Ω ON-resistance and 4A sink current capability

• Supports high switching frequency up to 2MHz

- Fast output rise and fall time

- Low propagation delay

• Three-state PWM input for power stage shutdown

• Internal bootstrap Schottky diode

The ISL95808 features a 4A typical sinking current for the

lower gate driver. This current is capable of holding the lower

MOSFET gate off during the rising edge of the phase node. This

prevents shoot-through power loss caused by the high dv/dt of

phase voltages. The operating voltage matches the 30V

breakdown voltage of the MOSFETs commonly used in mobile

computer power supplies.

• Low shutdown supply current (5V, 3µA)

• Diode emulation for enhanced light-load efficiency and

prebiased start-up applications

• VCC POR (Power-On Reset) feature integrated

• Low three-state shutdown hold-off time (typical 160ns)

The ISL95808 also features a three-state PWM input. This

PWM input, working together with Intersil’s multiphase PWM

controllers, will prevent negative voltage output during CPU

shutdown. This feature eliminates a protective Schottky diode

usually seen in microprocessor power systems.

• DFN package

• Pb-free (RoHS compliant)

Applications

• Core voltage supplies for Intel® and AMD™ mobile

microprocessors

MOSFET gates can be efficiently switched up to 2MHz using

the ISL95808. Each driver is capable of driving a 3000pF load

with propagation delays of 8ns and transition times under

10ns. Bootstrapping is implemented with an internal Schottky

diode. This reduces system cost and complexity, while allowing

for the use of higher performance MOSFETs. Adaptive

shoot--through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

• High frequency low profile DC/DC converters

• High current low output voltage DC/DC converters

• High input voltage DC/DC converters

Related Literature

• TB389, “PCB Land Pattern Design and Surface Mount

Guidelines for MLFP Packages”

A diode emulation feature is integrated in the ISL95808 to

enhance converter efficiency at light load conditions. This

feature also allows for monotonic start-up into prebiased

outputs. When diode emulation is enabled, the driver will allow

discontinuous conduction mode by detecting when the

inductor current reaches zero and subsequently turning off the

low-side MOSFET gate.

• TB447, “Guidelines for Preventing Boot-to-Phase Stress on

Half-Bridge MOSFET Driver ICs”

The ISL95808 also features very low shutdown supply current

(5V, 3µA) to ensure the low power consumption.

VCC

BOOT

FCCM

UGATE

PHASE

SHOOT-

THROUGH

PROTECTION

VCC

CONTROL

LOGIC

PWM

10kΩ

LGATE

GND

THERMAL PAD

FIGURE 1. BLOCK DIAGRAM

May 25, 2016

FN8689.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

12 3 4 5 6 7...9

中文翻译

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与ISL95808HRZ-T相关器件

型号	品牌	获取价格	描述	数据表
ISL95808IRZ-T	INTERSIL	获取价格	Three-state PWM input for power stage shutdown
ISL95810	INTERSIL	获取价格	Single Digitally Controlled Potentiometer (XDCP)
ISL95810	RENESAS	获取价格	Single Digitally Controlled Potentiometer (XDCP?)
ISL95810_06	INTERSIL	获取价格	Low Noise, Low Power I2C Bus, 256 Taps
ISL95810UIRT8	INTERSIL	获取价格	Low Noise, Low Power I2C Bus, 256 Taps
ISL95810UIRT8Z	INTERSIL	获取价格	Single Digitally Controlled Potentiometer (XDCP)
ISL95810UIRT8Z	RENESAS	获取价格	Single Digitally Controlled Potentiometer (XDCP™); DFN8, MSOP8; Temp Range: -40&
ISL95810UIRT8Z-T	INTERSIL	获取价格	Single Digitally Controlled Potentiometer (XDCP)
ISL95810UIRT8Z-T	RENESAS	获取价格	Single Digitally Controlled Potentiometer (XDCP™); DFN8, MSOP8; Temp Range: -40&
ISL95810UIU8	INTERSIL	获取价格	Single Digitally Controlled Potentiometer (XDCP)

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