Datasheet > ISL9000_06

ISL9000_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
11页	223K
描述
Dual LDO with Low Noise, Very High PSRR, and Low IQ

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ISL9000_06 数据手册

ISL9000

Electrical Specifications Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature

range of the device as follows:

= -40°C to +85°C; V = (V +0.5V) to 6.5V with a minimum V of 2.3V; C = 1µF; C = 1µF;

= 0.01µF; C

POR

= 0.01µF (Continued)

BYP

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

LDO Soft-Start Ramp Rate

Slope of linear portion of LDO output voltage ramp during

start-up

μs/V

SSR

EN1, EN2 PIN CHARACTERISTICS

Input Low Voltage

-0.3

1.4

0.5

Input High Voltage

+0.3

Input Leakage Current

Pin Capacitance

I , I

IL IH

0.1

μA

Informative

POR1, POR2 PIN CHARACTERISTICS

POR1, POR2 Thresholds

As a percentage of nominal output voltage

POR+

POR-

P1LH

P1HL

P2LH

P2HL

POR1 Delay

1.0

2.0

3.0

μs

POR2 Delay

= 0.01μF

100

200

300

POR

POR1, POR2 Pin Output Low

Voltage

@I = 1.0mA

0.2

POR1, POR2 Pin Internal Pull-Up

Resistance

100

180

kΩ

POR

NOTES:

3. Guaranteed by design and characterization.

4. VOx = 0.98 * VOx(NOM); Valid for VOx greater than 1.85V.

EN1

EN2

POR+

POR-

P1HL

P2HL

VO1

VO2

P1HL

P2HL

P1LH

P2LH

POR1

POR2

FIGURE 1. TIMING PARAMETER DEFINITION

FN9217.3

August 2, 2006

1 2 345 6 7...11

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