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2SA1235 PDF预览

2SA1235

更新时间: 2024-02-04 14:45:15
品牌 Logo 应用领域
谏早电子 - ISAHAYA 晶体晶体管光电二极管
页数 文件大小 规格书
4页 172K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

2SA1235 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SA1235 数据手册

 浏览型号2SA1235的Datasheet PDF文件第2页浏览型号2SA1235的Datasheet PDF文件第3页浏览型号2SA1235的Datasheet PDF文件第4页 
〈SMALL-SIGNAL TRANSISTOR〉  
2SA1235  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE(mini type)  
DESCRIPTION  
OUTLINE DRAWING  
Unit:mm  
2SA1235 is a mini package resin sealed  
silicon PNP epitaxial transistor,  
It is designed for low frequency voltage application.  
.
2.5  
1.5  
0.5  
0.5  
FEATURE  
●Small collector to emitter saturation voltage.  
VCE(sat)=-0.3V max(@Ic=-100mA,IB=-10mA)  
●Excellent linearity of DC forward gain.  
●Super mini package for easy mounting  
APPLICATION  
For Hybrid IC,small type machine low frequency voltage  
Amplify application.  
JEITA:SC-59  
JEDEC:Similar to TO-236  
MAXIMUM RATINGS(Ta=25℃)  
TERMINAL CONNECTER  
①:BASE  
Symbol  
VCBO  
VCEO  
VEBO  
I O  
Parameter  
Ratings  
-50  
Unit  
V
Collector to Base voltage  
Collector to Emitter voltage  
Emitter to Base voltage  
Collector current  
②:EMITTER  
-50  
V
③:COLLECTOR  
-6  
V
-200  
mA  
mW  
Pc  
Collector dissipation  
Junction temperature  
Storage temperature  
200  
Tj  
+150  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Parameter  
Symbol  
Test conditions  
Unit  
Min  
-50  
-
Typ  
-
Max  
-
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
DC forward current gain  
C to E Saturation Vlotage  
Gain bandwidth product  
Collector output capacitance  
Noise figure  
V(BR)CEO  
ICBO  
IEBO  
I C=-100μA ,R BE=∞  
V CB=-50V, I E=0mA  
V EB=-6V, I C=0mA  
V
-
-0.1  
-0.1  
800  
-
μA  
μA  
-
-
hFE  
V
V
CE=-6V, I C=-1mA  
CE=-6V, I C=-0.1mA  
150  
90  
-
-
hFE  
-
VCE(sat) I C=-100mA ,IB=-10mA  
-
-0.3  
-
V
MHz  
pF  
fT  
Cob  
NF  
V
CE=-6V, I E=10mA  
-
200  
4
V CB=-6V, I E=0,f=1MHz  
-
-
V CE=-6V, I E=0.3mA,f=100Hz,RG=10kΩ  
-
-
20  
dB  
※) It shows hFE classification in below table.  
Item  
150~300  
250~500  
400~800  
hFE Item  
ISAHAYA ELECTRONICS CORPORATION  

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