〈SMALL-SIGNAL TRANSISTOR〉
2SA1235
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(mini type)
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SA1235 is a mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
2.5
1.5
0.5
0.5
①
②
③
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max(@Ic=-100mA,IB=-10mA)
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA:SC-59
JEDEC:Similar to TO-236
MAXIMUM RATINGS(Ta=25℃)
TERMINAL CONNECTER
①:BASE
Symbol
VCBO
VCEO
VEBO
I O
Parameter
Ratings
-50
Unit
V
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
②:EMITTER
-50
V
③:COLLECTOR
-6
V
-200
mA
mW
℃
℃
Pc
Collector dissipation
Junction temperature
Storage temperature
200
Tj
+150
-55~+150
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
Unit
Min
-50
-
Typ
-
Max
-
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
I C=-100μA ,R BE=∞
V CB=-50V, I E=0mA
V EB=-6V, I C=0mA
V
-
-0.1
-0.1
800
-
μA
μA
-
-
hFE
V
V
CE=-6V, I C=-1mA
CE=-6V, I C=-0.1mA
※
150
90
-
-
hFE
-
VCE(sat) I C=-100mA ,IB=-10mA
-
-0.3
-
V
MHz
pF
fT
Cob
NF
V
CE=-6V, I E=10mA
-
200
4
V CB=-6V, I E=0,f=1MHz
-
-
V CE=-6V, I E=0.3mA,f=100Hz,RG=10kΩ
-
-
20
dB
※) It shows hFE classification in below table.
Item
E
F
G
150~300
250~500
400~800
hFE Item
ISAHAYA ELECTRONICS CORPORATION