Datasheet > 2SA1235A

2SA1235A

更新时间： 2024-01-17 04:35:17

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	297K
描述
TRANSISTOR(PNP)

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数据手册

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2SA1235A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1235A 数据手册

2SA1235A

TRANSISTOR(PNP)

SOT–23

FEATURES

 Low Collector Current

 Low Collector Power Dissipation

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-60

Unit

2. EMITTER

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current

-200

200

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

625

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

I_C=-100μA, I_E=0

-60

-50

-6

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-0.1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-60V, I_E=0

-100

500

I_EBO

V_EB=-6V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=-6V, I_C=-1mA

V_CE=-6V, I_C=-0.1mA

I_C=-100mA, I_B=-10mA

V_CE=-6V,I_C=-10mA

V_CB=-6V, I_E=0, f=1MHz

150

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

-0.3

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

200

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

RANK

M·E

M·F

150–300

250–500

RANGE

MARKING

M·E

M·F

JinYu

semiconductor

www.htsemi.com

Date:2011/05

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