Datasheet > 2SA1235A

2SA1235A

更新时间： 2024-11-26 14:54:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1132K
描述
SOT-23-3L

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数据手册

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2SA1235A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-3L Plastic-Encapsulate Transistors

2SA1235A

TRANSISTOR (PNP)

SOT-23-3L

FEATURES

 Low Collector Current

1. BASE

 Low Collector Power Dissipation

2. EMITTER

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-60

Unit

Collector-Emitter Voltage

-50

Emitter-Base Voltage

-6

Equivalent Circuit

Collector Current

-200

400

312.5

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-60

-50

-6

Typ

Max

Unit

I_C=-100μA, I_E=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-0.1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-60V, I_E=0

-100

500

I_EBO

V_EB=-6V, I_C=0

Emitter cut-off current

h_FE(1)

V_CE=-6V, I_C=-1mA

V_CE=-6V, I_C=-0.1mA

I_C=-100mA, I_B=-10mA

V_CE=-6V,I_C=-10mA

V_CB=-6V, I_E=0, f=1MHz

150

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

-0.3

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

200

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1)

RANK

M·E

M·F

150–300

250–500

RANGE

MARKING

M·E

M·F

www.jscj-elec.com

Rev. - 1.1

12 3 4

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