Datasheet > 2SA1235A

2SA1235A

更新时间： 2024-02-15 10:58:18

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管
页数	文件大小	规格书
1页	104K
描述
PNP Silicon Plastic Encapsulated Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1235A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA1235A 数据手册

2SA1235A

-0.2A , -60V

PNP Silicon Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

 Low Collector Current

 Low Collector Power Dissipation

Top View

C B

CLASSIFICATION OF h_{FE (1)}

2SA1235A-ME

2SA1235A-MF

250~500

M‧F

Product-Rank

150~300

Range

Marking

M‧E

Millimeter

Min. Max.

0.10 REF.

0.55 REF.

REF.

Min.

Max.

3.00

2.55

1.40

1.15

PACKAGE INFORMATION

2.80

2.25

1.20

0.90

0.08

0.15

Package

MPQ

LeaderSize

0.5 REF.

1.80

0.30

2.00

0.50

0.95 TYP.

SOT-23

7’ inch

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

-60

-50

-6

-200

200

P_C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

R_θJA

625

°C / W

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Collector to Base Breakdown Voltage V_(BR)CBO

Collector to Emitter Breakdown

Emitter to Base Breakdown Voltage

Collector Cut-off Current

Symbol

Min.

-60

-50

-6

Typ.

Max.

Unit

Test Conditions

I_C= -100A, I_E=0

I_C= -0.1mA, I_B=0

I_E= -100A, I_C=0

V_CB= -60V, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

-100

Emitter Cut-off Current

I_EBO

-100

500

nA

V_EB= -6V, I_C=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

150

V_CE= -6V, I_C= -1mA

V_CE= -6V, I_C= -0.1mA

DC Current Gain

Collector to Emitter

Saturation Voltage

-0.3

-1

I_C= -100mA, I_B= -10mA

Base to Emitter Saturation Voltage

V_BE(sat)

Transition Frequency

f_T

200

MHz

V_CE= -6V, I_C= -10mA

Collector Output Capacitance

C_ob

V_CB= -6V, I_E=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Jan-2011 Rev. A

Page 1 of 1

下载PDF

与2SA1235A相关器件

型号	品牌	描述	获取价格	数据表
2SA1235A_08	BL Galaxy Electrical	Silicon Epitaxial Planar Transistor	获取价格
2SA1235A_15	WINNERJOIN	PNP TRANSISTOR	获取价格
2SA1235AE	RECTRON	Transistor	获取价格
2SA1235AE-T	RECTRON	Transistor	获取价格
2SA1235AF	RECTRON	Transistor	获取价格
2SA1235AF-T	RECTRON	暂无描述	获取价格