Datasheet > 2SA1235A

2SA1235A

更新时间： 2023-12-06 20:08:33

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1059K
描述
双极型晶体管

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2SA1235A 数据手册

2SA1235A

Silicon Epitaxial Planar Transistor

FEATURES

SOT-23

Min

Small collector to emitter saturation voltage

Dim

Max

3.10

1.50

2.70

V_CE(sat)=-0.3V max(@I_C=-100mA,I_B=-10mA).

Excellent lineary DC forward current gain.

Super mini package for easy mounting.

1.10

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

APPLICATIONS

PNP epitaxial type transistor designed for low frequency.

0.1 Typical

Voltage amplify application.

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

SOT-23

Type No.

Marking

Package Code

SOT-23

2SA1235A

ME/MF/MG

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-50

-6

Collector Current -Continuous

Collector Dissipation

-200

℃

P_C

150

Junction and Storage Temperature

T_j,T_stg

-55 to +125

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA,I_E=0

-50

V_(BR)CEO

V_(BR)EBO

I_C=-1mA,I_B=0

-50

-6

I_E=-100μA,I_C=0

I_CBO

I_EBO

V_CB=-50V,I_E=0

V_EB=-6V,I_C=0

-0.1

μA

Emitter cut-off current

-0.1

800

V_CE=-6V,I_C=-1mA

150

DC current gain

h_FE

V_CE=-6V,I_C=-0.1mA

Collector-emitter saturation voltage

Transition frequency

I_C=-100mA, I_B=-10mA

V_CE=-6V, I_C=-10mA

V_CB=-6V,I_E=0,f=1MHz

V_CE(sat)

f_T

-0.3

200

MHz

Collector output capacitance

Noise figure

C_ob

_CE=-6V,I_E=0.3mA,

f=100MHz,R_G=10kΩ

CLASSIFICATION OF h_FE(1)

Rank

Range

150-300

250-500

400-800

Marking

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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