Datasheet > ISA1284AS1

ISA1284AS1

更新时间： 2025-07-28 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	440K
描述
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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中文翻译

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数据手册

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ISA1284AS1 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

ISA1284AS1

FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

ISA1284AS1 is a silicon PNP epitaxial type transistor

designed for high voltage application.

Complementary with ISC3244AS1.

4.0

FEATURE

0.1

●High voltage V_CEO=-100V

●High peak collector current.

I_CM=-800mA

0.45

●High gain band width product. fT=130MHz (typ)

●High collector dissipation. P_C=600mW

2.5

APPLICATION

For 20～40W amp complementary drive, relay drive, power supply

application.

① ② ③

JEITA：

JEDEC：

TERMINAL CONNECTER

①：EMITTER

MAXIMUM RATINGS（Ta=25℃）

②：COLLECTOR

③：BASE

Symbol

Parameter

Ratings

Unit

VCBO

VEBO

VCEO

I_C

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

-100

-5

-100

-500

℃

I_CM

Peak collector current

Collector dissipation

-800

P_c

600

T_j

Junction temperature

Storage temperature

+150

T_stg

-55～+150

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Test conditions

Unit

Min

-100

-5

-100

Typ

Max

V(BR)CBO

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

I_C= -10μA , I_E=0mA

I_E= -10μA , I_C=0mA

I_C= -1mA , RBE= ∞

V(BR)EBO

V(BR)CEO

ICBO

V _CB= -50V , I _E= 0mA

V _EB= -2V , I _C= 0mA

-0.5

300

-0.5

μA

IEBO

hFE※

VCE(sat)

DC forward current gain

C to E Saturation Voltage

Gain band width product

Collector output capacitance

V _CE= -10V , I_C= -10mA

I _C= -150mA , I _B= -15mA

V _CE= -10V , I _E= 10mA

V _CB= -10V , I _E= 0mA,f=1MHz

-0.15

130

MHz

Cob

Item

※） It shows hFE classification in right table.

hFE item

50～110

90～180

150～300

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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