Datasheet > ISA1602AM1_13

ISA1602AM1_13

更新时间： 2024-11-20 12:31:15

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
5页	197K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

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中文翻译

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数据手册

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ISA1602AM1_13 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

ISA1235AC1 ISA1602AM1

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

UNIT：mm

DESCRIPTION

ISA1235AC1 ISA1602AM1 is super mini

package resin sealed silicon PNP epitaxial type

transistor.

ISA1235AC1

2.8

ISA1602AM1

2.1

0.425 1.25 0.425

These are designed for low frequency voltage

amplify application .

1.5

0.65

FEATURE

①

②

③

・Excellent linearity of DC forward current gain.

・Small collector to emitter saturation voltage

VCE(sat)=-0.3Vmax

APPLICATION

0～0.1

For small type machine low frequency voltage

amplify application.

JEITA：SC-59

JEITA：SC-70

JEDEC：－

JEDEC：TO-236 resemblance

TERMINAL CONNECTOR

①：BASE

TERMINAL CONNECTOR

①：BASE

②：EMITTER

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

Ratings

Symbol

Parameter

UNIT

MARKING

ISA1235AC1 ISA1602AM1

Ｖ_ＣＢＯ

Ｖ_ＥＢＯ

Ｖ_ＣＥＯ

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

-60

-6

-50

Ｉ

-200

℃

Ｃ

Ｐ_Ｃ

Ｔｊ

Collector dissipation

200

Junction temperature

Storage temperature

+150

Ｔｓｔｇ

-55～+150

hFE ITEM

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Ave

－

Symbol

Parameter

Test conditions

UNIT

Min

-50

－

Max

－

Ｖ_{（ＢＲ）ＣＥＯ}

I =-100μA，R_BE=∞

μA

－

Collector to Emitter Breakdown voltage

Collector cut off current

Ｉ

V_CB=-60V，I _E=0

－

-0.1

500

－

ＣＢＯ

Ｉ

Emitter cut off current

V_EB=-6V，I _C=0

－

EＢＯ

V_CE=-6V，I _C=-1mA

V_CE=-6V，I _C=-0.1mA

150

－

DC forward current gain

ｈ_ＦＥ*

ｈ_ＦＥ

－

DC forward current gain

Ｖ_{ＣＥ（ｓａｔ）}Collector to Emitter saturation voltage

_C=-100mA，I _B=-10mA

－

-0.3

－

ｆ_Ｔ

Gain bandwidth product

V_CE=-6V，I _E=10mA

V_CB=-6V，I _E=0,f=1MHz

V_CE=-6V，I _E=0.3mA，

f=100Hz，RG=10kΩ

－

200

4.0

MHz

Cob

－

Collector output capacitance

Noise Figure

－

*：It shows hFE classification in below table.

ｈFE

150～300

250～500

ISAHAYA ELECTRONICS CORPORATION

12 3 4 5

中文翻译

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