Datasheet > ISA1399AS1

ISA1399AS1

更新时间： 2024-11-20 12:31:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
3页	153K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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中文翻译

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ISA1399AS1 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

ISA1399AS1

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

ISA1399AS1 is a silicon PNP epitaxial type transistor

designed with High collector current, high voltage.

Complementary with ISA3581AS1.

4.0

FEATURE

0.1

●High collector current. I_CM=600mA

●High gain band width product. fT=150MHz typ

0.45

●High V_CEO. V_CEO=-50V

●Excellent linearity of DC forward current gain.

2.5

APPLICATION

For switching, small type motor drive application.

① ② ③

JEITA：

JEDEC：

TERMINAL CONNECTER

①：EMITTER

MAXIMUM RATINGS（Ta=25℃）

②：COLLECTOR

③：BASE

Symbol

Parameter

Ratings

Unit

VCBO

VEBO

VCEO

I_C

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

-55

-4

-50

-400

℃

I_CM

Peak collector current

Collector dissipation

-600

P_c

600

T_j

Junction temperature

Storage temperature

＋150

-55～＋150

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Test conditions

Unit

Min

-55

-4

-50

Typ

Max

V(BR)CBO

C to B break down voltage

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

I_C= -10μA , I_E= 0

V(BR)EBO

V(BR)CEO

ICBO

I_E= -10μA , I_C= 0

I_C= -100μA , RBE= ∞

V _CB= -25V , I _E= 0mA

V _EB= -2V , I_C= 0mA

V _CE= -4V , I_C= -100mA

I _C= -200mA , I _B= -10mA

V _CE= -6V , I _E= 10mA

-1

500

-0.5

μA

IEBO

hFE※

VCE(sat)

DC forward current gain

C to E Saturation Voltage

Gain band width product

-0.17

150

MHz

Item

※） It shows hFE classification in right table.

hFE item

90～180

150～300

250～500

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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