〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
UNIT:mm
DESCRIPTION
ISA1530AC1 ISA1603AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
ISA1530AC1
2.8
ISA1603AM1
2.1
0.425 1.25 0.425
These are designed for low frequency voltage
amplify application .
1.5
0.65
0.65
FEATURE
①
①
②
②
③
③
・Excellent linearity of DC forward current gain.
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
APPLICATION
0~0.1
0~0.1
For small type machine low frequency voltage
amplify application.
JEITA:SC-59
JEITA:SC-70
JEDEC:-
JEDEC:Similar to TO-236
TERMINAL CONNECTOR
①:BASE
TERMINAL CONNECTOR
①:BASE
②:EMITTER
②:EMITTER
③:COLLECTOR
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Ratings
Symbol
Parameter
UNIT
MARKING
ISA1530AC1 ISA1603AM1
VCBO
VEBO
VCEO
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
-60
-6
V
V
.
-50
V
TR
I
-150
mA
mW
℃
℃
C
PC
Tj
Collector dissipation
200
Junction temperature
Storage temperature
+150
Tstg
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Symbol
Parameter
Test conditions
UNIT
Min
-50
-
Ave
-
Max
-
V(BR)CEO
I =-100μA,RBE=∞
C
V
μA
μA
-
Collector to Emitter Breakdown voltage
Collector cut off current
I
VCB=-60V,I E =0
-
-0.1
-0.1
560
-
CBO
I
Emitter cut off current
VEB=-4V,I C =0
-
-
EBO
VCE=-6V,I C =-1mA
VCE=-6V,I C =-0.1mA
120
70
-
DC forward current gain
hFE*
hFE
-
-
DC forward current gain
VCE(sat)
fT
I
C =-100mA,I B =-10mA
-
-
-0.3
-
V
Collector to Emitter saturation voltage
Gain bandwidth product
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA
f=100Hz,RG=10kΩ
-
200
4.0
MHz
pF
Cob
NF
-
-
Collector output capacitance
Noise figure
-
-
20
dB
Q
R
S
*:It shows hFE classification in below table.
hFE
120~270
180~390
270~560
ISAHAYA ELECTRONICS CORPORATION