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IS64C6416-20KA3 PDF预览

IS64C6416-20KA3

更新时间: 2024-10-02 04:22:59
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
12页 56K
描述
high-speed, 1,048,576-bit static RAM

IS64C6416-20KA3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.400 INCH, PLASTIC, SOJ-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:20 nsJESD-30 代码:R-PDSO-J44
JESD-609代码:e0长度:28.58 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:64KX16
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:3.76 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

IS64C6416-20KA3 数据手册

 浏览型号IS64C6416-20KA3的Datasheet PDF文件第2页浏览型号IS64C6416-20KA3的Datasheet PDF文件第3页浏览型号IS64C6416-20KA3的Datasheet PDF文件第4页浏览型号IS64C6416-20KA3的Datasheet PDF文件第5页浏览型号IS64C6416-20KA3的Datasheet PDF文件第6页浏览型号IS64C6416-20KA3的Datasheet PDF文件第7页 
®
IS64C6416  
ISSI  
ADVANCEDINFORMATION  
JANUARY2003  
DESCRIPTION  
FEATURES  
TheISSIIS64C6416isahigh-speed,1,048,576-bitstaticRAM  
organized as 65,536 words by 16 bits. It is fabricated using  
ISSI'shigh-performanceCMOStechnology.Thishighlyreliable  
process coupled with innovative circuit design techniques,  
yields access times as fast as 10 ns with low power consump-  
tion.  
• High-speed access time: 15 and 20 ns  
• CMOS low power operation  
• TTL compatible interface levels  
• Single 5V ± 10% power supply  
• Fully static operation: no clock or refresh  
required  
WhenCEisHIGH(deselected),thedeviceassumesastandby  
mode at which the power dissipation can be reduced down  
with CMOS input levels.  
• Three state outputs  
• Industrial temperature available  
• Available in 44-pin SOJ package and  
44-pin TSOP (Type II)  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs, CE and OE. The active LOW Write  
Enable (WE) controls both writing and reading of the memory.  
A data byte allows Upper Byte (UB) and Lower Byte (LB)  
access.  
The IS64C6416 is packaged in the JEDEC standard 44-pin  
400-mil SOJ and 44-pin TSOP (Type II).  
FUNCTIONAL BLOCK DIAGRAM  
64K x 16  
MEMORY ARRAY  
A0-A15  
DECODER  
VCC  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any  
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are  
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00A  
1
01/07/03  

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