IS64C6416-20KA2

更新时间： 2024-10-02 04:22:59

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
12页	56K
描述
high-speed, 1,048,576-bit static RAM

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数据手册

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IS64C6416-20KA2 数据手册

IS64C6416

ISSI

ADVANCEDINFORMATION

JANUARY2003

DESCRIPTION

FEATURES

TheISSIIS64C6416isahigh-speed,1,048,576-bitstaticRAM

organized as 65,536 words by 16 bits. It is fabricated using

ISSI'shigh-performanceCMOStechnology.Thishighlyreliable

process coupled with innovative circuit design techniques,

yields access times as fast as 10 ns with low power consump-

tion.

• High-speed access time: 15 and 20 ns

• CMOS low power operation

• TTL compatible interface levels

• Single 5V ± 10% power supply

• Fully static operation: no clock or refresh

required

WhenCEisHIGH(deselected),thedeviceassumesastandby

mode at which the power dissipation can be reduced down

with CMOS input levels.

• Three state outputs

• Industrial temperature available

• Available in 44-pin SOJ package and

44-pin TSOP (Type II)

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW Write

Enable (WE) controls both writing and reading of the memory.

A data byte allows Upper Byte (UB) and Lower Byte (LB)

access.

The IS64C6416 is packaged in the JEDEC standard 44-pin

400-mil SOJ and 44-pin TSOP (Type II).

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

VCC

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are

advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00A

01/07/03

12 3 4 5 6 7...12

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