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IS62LV2568LL-85TI PDF预览

IS62LV2568LL-85TI

更新时间: 2024-02-11 04:23:03
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路静态存储器光电二极管输出元件输入元件
页数 文件大小 规格书
10页 64K
描述
256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV2568LL-85TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1-32
针数:32Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:85 ns其他特性:TTL COMPATIBLE INPUTS/OUTPUTS
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000005 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.065 mA
最大供电电压 (Vsup):3 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

IS62LV2568LL-85TI 数据手册

 浏览型号IS62LV2568LL-85TI的Datasheet PDF文件第2页浏览型号IS62LV2568LL-85TI的Datasheet PDF文件第3页浏览型号IS62LV2568LL-85TI的Datasheet PDF文件第4页浏览型号IS62LV2568LL-85TI的Datasheet PDF文件第5页浏览型号IS62LV2568LL-85TI的Datasheet PDF文件第6页浏览型号IS62LV2568LL-85TI的Datasheet PDF文件第7页 
®
IS62LV2568LL  
256K x 8 LOW POWER and LOW Vcc  
CMOS STATIC RAM  
ISSI  
APRIL 2000  
FEATURES  
DESCRIPTION  
• Access times of 70 and 85 ns  
The ISSI IS62LV2568LL is a low voltage, 262,144 words  
CMOS low power operation:  
— 120 mW (typical) operating  
— 6 µW (typical) standby  
by 8 bits, CMOS SRAM. It is fabricated using ISSI’s low  
voltage, six transistor (6T), CMOS technology. The device is  
targeted to satisfy the demands of the state-of-the-art  
technologies such as cell phones and pagers.  
• Low data retention voltage: 2V (min.)  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationcanbereduced  
down with CMOS input levels. Additionally, easy memory  
expansion is provided by using Chip Enable and Output  
Enable inputs, CE and OE. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
• TTL compatible inputs and outputs  
• Fully static operation:  
— No clock or refresh required  
The IS62LV2568LL is available in 32-pin TSOP (Type I),  
STSOP (Type I), and 36-pin mini BGA.  
• Single 2.5V to 3.0V power supply  
• Available in 32-pin TSOP (Type I), STSOP (Type I),  
and 36-pin mini BGA  
FUNCTIONAL BLOCK DIAGRAM  
256K x 8  
MEMORY ARRAY  
A0-A17  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. B  
05/03/00  

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