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IS62LV256AL-20J PDF预览

IS62LV256AL-20J

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
14页 105K
描述
32K x 8 LOW VOLTAGE CMOS STATIC RAM

IS62LV256AL-20J 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSOP
包装说明:TSOP1, TSSOP28,.53,22针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41Factory Lead Time:6 weeks
风险等级:2.19最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:11.8 mm
内存密度:262144 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.025 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:8 mm

IS62LV256AL-20J 数据手册

 浏览型号IS62LV256AL-20J的Datasheet PDF文件第2页浏览型号IS62LV256AL-20J的Datasheet PDF文件第3页浏览型号IS62LV256AL-20J的Datasheet PDF文件第4页浏览型号IS62LV256AL-20J的Datasheet PDF文件第5页浏览型号IS62LV256AL-20J的Datasheet PDF文件第6页浏览型号IS62LV256AL-20J的Datasheet PDF文件第7页 
®
IS65LV256AL  
IS62LV256AL  
ISSI  
32K x 8 LOW VOLTAGE  
CMOS STATIC RAM  
MARCH 2006  
FEATURES  
DESCRIPTION  
The ISSI IS62/65LV256AL is a very high-speed, low  
power, 32,768-word by 8-bit static RAM. It is fabricated  
using ISSI's high-performance CMOS technology. This  
highly reliable process coupled with innovative circuit  
design techniques, yields access times as fast as 15 ns  
maximum.  
• High-speed access time: 20, 45 ns  
• Automatic power-down when chip is deselected  
• CMOS low power operation  
— 17 µW (typical) CMOS standby  
— 50 mW (typical) operating  
• TTL compatible interface levels  
• Single 3.3V power supply  
When CE is HIGH (deselected), the device assumes a  
standbymodeatwhichthepowerdissipationisreducedto  
150 µW (typical) with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using an active  
LOW Chip Enable (CE). The active LOW Write Enable  
(WE) controls both writing and reading of the memory.  
• Three-state outputs  
• Industrial and Automotive temperatures avail-  
able  
The IS62/65LV256AL is available in the JEDEC standard  
28-pin SOJ, 28-pin SOP, and the 28-pin 450-mil TSOP  
package.  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
32K x 8  
MEMORY ARRAY  
A0-A14  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. A  
03/17/06  

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