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IS62LV1288LL-55H PDF预览

IS62LV1288LL-55H

更新时间: 2024-02-01 13:32:49
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
10页 77K
描述
128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV1288LL-55H 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.8,20
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.87最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000008 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.03 mA
最大供电电压 (Vsup):3.45 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

IS62LV1288LL-55H 数据手册

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®
IS62LV1288LL  
128K x 8 LOW POWER and LOW Vcc  
CMOS STATIC RAM  
ISSI  
FEBUARY2001  
FEATURES  
DESCRIPTION  
The ISSI IS62LV1288LL is a low power and low  
Vcc,131,072-word by 8-bit CMOS static RAM. It is  
fabricated using ISSI's high-performance CMOS  
technology. This highly reliable process coupled with  
innovative circuit design techniques, yields higher  
performance and low power consumption devices.  
• Access times of 45, 55, and 70 ns  
Low active power: 60 mW (typical)  
Low standby power: 15 µW (typical) CMOS  
standby  
• Low data retention voltage: 2V (min.)  
• Ultra Low Power  
When CE1 is HIGH or CE2 is LOW (deselected), the  
device assumes a standby mode at which the power  
dissipation can be reduced by using CMOS input levels.  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
• TTL compatible inputs and outputs  
• Single 2.5V (min.) to 3.45V (max.) power supply  
• Industrialtemperatureavailable  
Easy memory expansion is provided by using two Chip  
Enableinputs,CE1andCE2.TheactiveLOWWriteEnable  
(WE) controls both writing and reading of the memory.  
• Available in 32-pin TSOP (Type I), 32-pin  
STSOP, and 450-mil SOP  
The IS62LV1288LL is available in 32-pin TSOP (Type I),  
STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil  
pin to pin) packages.  
FUNCTIONAL BLOCK DIAGRAM  
512 X 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CONTROL  
CIRCUIT  
CE2  
OE  
WE  
This document contISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no  
responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. A  
1
03/22/01  

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