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IS61VF204836B-7.5B2L PDF预览

IS61VF204836B-7.5B2L

更新时间： 2024-11-20 12:03:15
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
34页 1684K
描述
2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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IS61VF204836B-7.5B2L 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：BGA包装说明：BGA, BGA119,7X17,50
针数：119Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.74最长访问时间：7.5 ns
最大时钟频率 (fCLK)：117 MHzI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119长度：22 mm
内存密度：75497472 bit内存集成电路类型：CACHE SRAM
内存宽度：36功能数量：1
端子数量：119字数：2097152 words
字数代码：2000000工作模式：SYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：2MX36输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：BGA
封装等效代码：BGA119,7X17,50封装形状：RECTANGULAR
封装形式：GRID ARRAY并行/串行：PARALLEL
电源：2.5 V认证状态：Not Qualified
座面最大高度：3.5 mm最小待机电流：2.38 V
子类别：SRAMs最大供电电压 (Vsup)：2.625 V
最小供电电压 (Vsup)：2.375 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：BALL
端子节距：1.27 mm端子位置：BOTTOM
宽度：14 mmBase Number Matches：1

IS61VF204836B-7.5B2L 数据手册

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IS61LF204836B, IS61VF/VVF204836B  
IS61LF409618B, IS61VF/VVF409618B  
2M x 36, 4M x 18  
72 Mb SYNCHRONOUS FLOW-THROUGH  
STATIC RAM  
ADVANCED INFORMATION  
OCTOBER 2012  
DESCRIPTION  
FEATURES  
The 72Mb product family features high-speed, low-power  
synchronous static RAMs designed to provide burstable,  
high-performance memory for communication and network-  
ing applications. The IS61LF/VF204836B is organized as  
2,096,952 words by 36 bits. The IS61LF/VF409618B is  
organized as 4,193,904 words by 18 bits. Fabricated with  
ISSI's advanced CMOS technology, the device integrates  
a 2-bit burst counter, high-speed SRAM core, and high-  
drive capability outputs into a single monolithic circuit. All  
synchronous inputs pass through registers controlled by  
a positive-edge-triggered single clock input.  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Burst sequence control using MODE input  
•
Three chip enable option for simple depth expan-  
sion and address pipelining  
• Common data inputs and data outputs  
• Auto Power-down during deselect  
• Single cycle deselect  
Writecyclesareinternallyself-timedandareinitiatedbythe  
rising edge of the clock input. Write cycles can be one to  
four bytes wide as controlled by the write control inputs.  
Separate byte enables allow individual bytes to be writ-  
ten. Byte write operation is performed by using byte write  
enable (BWE) input combined with one or more individual  
byte write signals (BWx). In addition, Global Write (GW)  
is available for writing all bytes at one time, regardless of  
the byte write controls.  
• Snooze MODE for reduced-power standby  
• JTAG Boundary Scan for PBGA package  
• Power Supply  
LF: Vdd 3.3V (+ 5%), Vddq 3.3V/2.5V (+ 5%)  
VF: Vdd 2.5V (+ 5%), Vddq 2.5V (+ 5%)  
VVF: Vdd 1.8V (+ 5%), Vddq 1.8V (+ 5%)  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller)  
input pins. Subsequent burst addresses can be gener-  
ated internally and controlled by the ADV (burst address  
advance) input pin.  
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-  
pin PBGA packages  
The mode pin is used to select the burst sequence order,  
Linear burst is achieved when this pin is tied LOW. Inter-  
leave burst is achieved when this pin is tied HIGH or left  
floating.  
• Lead-free available  
FAST ACCESS TIME  
Symbol  
Parameter  
-6.5  
6.5  
-7.5  
7.5  
8.5  
117  
Units  
ns  
tkq  
Clock Access Time  
Cycle Time  
tkc  
7.5  
ns  
Frequency  
133  
MHz  
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause  
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written  
assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. 00B  
10/15/2012  
1234567...34

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与IS61VF204836B-7.5B2L相关器件

型号 品牌 获取价格 描述 数据表
IS61VF204836B-7.5B3 ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF204836B-7.5B3L ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF204836B-7.5M3 ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF204836B-7.5M3L ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF204836B-7.5TQ ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF204836B-7.5TQL ISSI

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 		2M x 36, 4M x 18 72 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF204836B-7.5TQLI ISSI

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 		Cache SRAM, 2MX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100
IS61VF204836B-7.5TQLI-TR ISSI

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 		IC SRAM 72MBIT 7.5NS 100TQFP
IS61VF25618A ISSI

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 		128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61VF25618A-6.5B2 ISSI

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 		128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM

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