Datasheet > IS61NLP409618B-166M3L

IS61NLP409618B-166M3L

更新时间： 2024-11-25 19:31:03

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器内存集成电路
页数	文件大小	规格书
39页	1388K
描述
ZBT SRAM, 4MX18, 3.5ns, CMOS, PBGA165, LFBGA-165

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IS61NLP409618B-166M3L 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	BGA	包装说明：	LBGA,
针数：	165	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.71	最长访问时间：	3.5 ns
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	17 mm	内存密度：	75497472 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	4MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	座面最大高度：	1.4 mm
最大供电电压 (Vsup)：	3.465 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	10	宽度：	15 mm
Base Number Matches：	1

IS61NLP409618B-166M3L 数据手册

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IS61NLP204836B/IS61NVP/NVVP204836B

IS61NLP409618B/IS61NVP/NVVP409618B

ADVANCED INFORMATION

FEBRUARY 2013

2M x 36 and 4M x 18

72Mb, PIPELINE 'NO WAIT' STATE BUS SRAM

FEATURES

DESCRIPTION

The72Megproductfamilyfeatureshigh-speed,low-power

synchronousstaticRAMsdesignedtoprovideaburstable,

high-performance, 'no wait' state, device for networking

and communications applications. They are organized as

2,096,952 words by 36 bits and 4,193,904 words by 18

bits, fabricated with ISSI's advanced CMOS technology.

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

Incorporating a 'no wait' state feature, wait cycles are

eliminated when the bus switches from read to write, or

write to read. This device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit.

• Clock controlled, registered address,

data and control

• Interleaved or linear burst sequence control us-

ing MODE input

Allsynchronousinputspassthroughregistersarecontrolled

byapositive-edge-triggeredsingleclockinput.Operations

may be suspended and all synchronous inputs ignored

when Clock Enable, CKE is HIGH. In this state the internal

device will hold their previous values.

• Three chip enables for simple depth expansion

and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

AllRead,WriteandDeselectcyclesareinitiatedbytheADV

input. When the ADV is HIGH the internal burst counter

is incremented. New external addresses can be loaded

when ADV is LOW.

• JEDEC 100-pin TQFP, 165-ball PBGA and 119-

ball PBGA packages

Write cycles are internally self-timed and are initiated

by the rising edge of the clock inputs and when WE is

LOW. Separate byte enables allow individual bytes to be

written.

• Power supply:

NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%)

NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%)

NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%)

• JTAG Boundary Scan for PBGA packages

• Industrial temperature available

• Lead-free available

A burst mode pin (MODE) deﬁnes the order of the burst

sequence.WhentiedHIGH,theinterleavedburstsequence

is selected. When tied LOW, the linear burst sequence is

selected.

FAST ACCESS TIME

Symbol

Parameter

-250

2.6

-200

3.1

166

3.5

Units

tkq

Clock Access Time

Cycle Time

tkc

Frequency

250

200

166

MHz

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device speciﬁcation before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. 00C

02/20/2013

12 3 4 5 6 7...39

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与IS61NLP409618B-166M3L相关器件

型号	品牌	获取价格	描述	数据表
IS61NLP409618B-166M3LI	ISSI	获取价格	ZBT SRAM, 4MX18, 3.5ns, CMOS, PBGA165, LFBGA-165
IS61NLP409618B-166TQL	ISSI	获取价格	ZBT SRAM, 4MX18, 3.5ns, CMOS, PQFP100, TQFP-100
IS61NLP409618B-200B2L	ISSI	获取价格	ZBT SRAM, 4MX18, 3.1ns, CMOS, PBGA119, BGA-119
IS61NLP409618B-200B3L	ISSI	获取价格	ZBT SRAM, 4MX18, 3.1ns, CMOS, PBGA165, TFBGA-165
IS61NLP409618B-200B3LI	ISSI	获取价格	ZBT SRAM, 4MX18, 3.1ns, CMOS, PBGA165, TFBGA-165
IS61NLP409618B-200M3L	ISSI	获取价格	ZBT SRAM, 4MX18, 3.1ns, CMOS, PBGA165, LFBGA-165
IS61NLP409618B-200TQL	ISSI	获取价格	ZBT SRAM, 4MX18, 3.1ns, CMOS, PQFP100, TQFP-100
IS61NLP409618B-200TQLI	ISSI	获取价格	ZBT SRAM, 4MX18, 3.1ns, CMOS, PQFP100, TQFP-100
IS61NLP409618B-250B3LI	ISSI	获取价格	ZBT SRAM, 4MX18, 2.6ns, CMOS, PBGA165, TFBGA-165
IS61NLP409618B-250TQLI	ISSI	获取价格	ZBT SRAM, 4MX18, 2.6ns, CMOS, PQFP100, TQFP-100

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