5秒后页面跳转
IS61LV3216-20TI PDF预览

IS61LV3216-20TI

更新时间: 2024-02-29 11:00:35
品牌 Logo 应用领域
矽成 - ICSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 429K
描述
Standard SRAM, 32KX16, 20ns, CMOS, PDSO44,

IS61LV3216-20TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:PLASTIC, TSOP2-44
针数:44Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.86最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.41 mm
内存密度:524288 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端口数量:1端子数量:44
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX16
输出特性:3-STATE可输出:YES
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.01 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.18 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

IS61LV3216-20TI 数据手册

 浏览型号IS61LV3216-20TI的Datasheet PDF文件第1页浏览型号IS61LV3216-20TI的Datasheet PDF文件第2页浏览型号IS61LV3216-20TI的Datasheet PDF文件第3页浏览型号IS61LV3216-20TI的Datasheet PDF文件第5页浏览型号IS61LV3216-20TI的Datasheet PDF文件第6页浏览型号IS61LV3216-20TI的Datasheet PDF文件第7页 
IS61LV3216  
CAPACITANCE(1)  
Symbol  
CIN  
Parameter  
Input Capacitance  
Conditions  
VIN = 0V  
Max.  
6
Unit  
pF  
COUT  
Input/Output Capacitance  
VOUT = 0V  
8
pF  
Note:  
1. Tested initially and after any design or process changes that may affect these parameters.  
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)  
-10  
Min.  
10  
3
-12  
Min.  
12  
3
-15  
Min.  
15  
3
-20  
Min.  
20  
3
Symbol Parameter  
Max.  
10  
10  
5
Max.  
12  
12  
6
Max.  
15  
15  
7
Max.  
20  
20  
8
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tRC  
Read Cycle Time  
tAA  
Address Access Time  
Output Hold Time  
tOHA  
tACE  
tDOE  
tHZOE  
CE Access Time  
0
0
0
0
OE Access Time  
(2)  
OE to High-Z Output  
OE to Low-Z Output  
CE to High-Z Output  
CE to Low-Z Output  
LB, UB Access Time  
LB, UB to High-Z Output  
LB, UB to Low-Z Output  
5
6
7
8
(2)  
(2  
tLZOE  
0
5
0
6
0
7
0
8
tHZCE  
0
0
0
0
(2)  
tLZCE  
tBA  
4
5
4
6
4
7
4
8
0
0
0
0
tHZB  
tLZB  
5
6
7
8
5
5
5
5
Notes:  
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of  
0 to 3.0V and output loading specified in Figure 1a.  
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.  
3. Not 100% tested.  
AC TEST CONDITIONS  
Parameter  
Input Pulse Level  
Input Rise and Fall Times  
Unit  
0V to 3.0V  
3 ns  
Input and Output Timing  
and Reference Level  
1.5V  
Output Load  
See Figures 1a and 1b  
AC TEST LOADS  
480  
480  
5V  
5V  
OUTPUT  
OUTPUT  
255 Ω  
255 Ω  
30 pF  
Including  
jig and  
5 pF  
Including  
jig and  
scope  
scope  
Figure 1a.  
Figure 1b.  
4
Integrated Circuit Solution Inc.  
SR009-0B  

与IS61LV3216-20TI相关器件

型号 品牌 描述 获取价格 数据表
IS61LV3216L ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM

获取价格

IS61LV3216L-10K ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM

获取价格

IS61LV3216L-10T ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM

获取价格

IS61LV3216L-12K ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM

获取价格

IS61LV3216L-12K ICSI Standard SRAM, 32KX16, 12ns, CMOS, PDSO44,

获取价格

IS61LV3216L-12KI ISSI 32K x 16 LOW VOLTAGE CMOS STATIC RAM

获取价格