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IS61LV3216L-12T PDF预览

IS61LV3216L-12T

更新时间: 2024-09-12 22:35:19
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 104K
描述
32K x 16 LOW VOLTAGE CMOS STATIC RAM

IS61LV3216L-12T 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:PLASTIC, TSOP2-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.82
Is Samacsys:N最长访问时间:12 ns
其他特性:LOW POWER STANDBY MODEI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:524288 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:44字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:32KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.001 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.12 mA
最大供电电压 (Vsup):3.63 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

IS61LV3216L-12T 数据手册

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ISSI®  
DECEMBER 2000  
IS61LV3216L  
32K x 16 LOW VOLTAGE CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ISSI IS61LV3216L is a high-speed, 512K static RAM  
organized as 32,768 words by 16 bits. It is fabricated using  
ISSI's high-performance CMOS technology. This highly reli-  
able process coupled with innovative circuit design tech-  
niques, yields fast access times with low power consumption.  
• High-speed access time: 10, 12, 15, and 20 ns  
• CMOS low power operation  
— 130 mW (typical) operating  
— 150 µW (typical) standby  
• TTL compatible interface levels  
WhenCEisHIGH(deselected),thedeviceassumesastandby  
mode at which the power dissipation can be reduced down to  
150 µW (typical) with CMOS input levels.  
• Single 3.3V + 10%, –5% power supply for 10  
and 12 ns  
• Single 3.3V 10% power supply for 15  
and 20 ns  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs, CE and OE. The active LOW Write  
Enable(WE)controlsbothwritingandreadingofthememory.A  
databyteallowsUpperByte(UB)andLowerByte(LB)access.  
• Fully static operation: no clock or refresh  
required  
• Three state outputs  
The IS61LV3216L is packaged in the JEDEC standard 44-pin  
400-mil SOJ and 44-pin TSOP (Type II).  
• Industrial temperature available  
• Available in 44-pin 400-mil SOJ package and  
44-pin TSOP (Type II)  
FUNCTIONAL BLOCK DIAGRAM  
32K x 16  
MEMORY ARRAY  
A0-A14  
DECODER  
VCC  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. A  
12/19/00  
1

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