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IS23SC4428-X3 PDF预览

IS23SC4428-X3

更新时间: 2024-01-25 11:18:47
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
12页 69K
描述
1-KBYTE EEPROM WITH WRITE PROTECT FUNCTION AND PROGRAMMABLE SECURITY CODE (PSC)

IS23SC4428-X3 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:DIE
包装说明:DIE针数:5
Reach Compliance Code:compliant风险等级:5.77
Is Samacsys:N最大时钟频率 (fCLK):0.02 MHz
JESD-30 代码:R-XUUC-N5JESD-609代码:e0
内存密度:8192 bit内存宽度:8
功能数量:1端子数量:5
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1KX8
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:RECTANGULAR封装形式:UNCASED CHIP
并行/串行:SERIAL峰值回流温度(摄氏度):240
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:30Base Number Matches:1

IS23SC4428-X3 数据手册

 浏览型号IS23SC4428-X3的Datasheet PDF文件第3页浏览型号IS23SC4428-X3的Datasheet PDF文件第4页浏览型号IS23SC4428-X3的Datasheet PDF文件第5页浏览型号IS23SC4428-X3的Datasheet PDF文件第7页浏览型号IS23SC4428-X3的Datasheet PDF文件第8页浏览型号IS23SC4428-X3的Datasheet PDF文件第9页 
IS23SC4418  
IS23SC4428  
®
ISSI  
RST  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
7
7
CLK  
I/O  
S3  
S4  
A9  
A0  
A6  
A7  
D4  
D5  
D6  
S0  
S1  
S2  
S5  
A8  
A1  
A2  
A3  
A4  
A5  
D0  
D1  
D2  
D3  
D7  
Address  
Data  
Command  
Figure 5. Command Entry Sequence  
GENERAL COMMAND DESCRIPTIONS  
Read 8-Bits Data  
The read 8-bit data command allows the user to specify  
the address (A0-A9) of the data byte to be read from the  
device. The byte address for the next output data is  
automatically incremented after every eight clock pulses.  
The data is output in sequential order, with the data from  
address n followed by the data from address n+1.  
(See Figure 6.)  
If the protect bit of the corresponding byte location is  
enabled, the write/erase operation will have no effect on  
the content.  
Write/Erase Data Byte with Protect Bit  
The write/erase data byte with protect bit command  
operates similarly to the write/erase data bytewith protect  
bit command except that it also writes 0 to the  
corresponding protect bit. After the protect bit is set to 0  
(write protection enabled), it cannot be changed again.  
(See Figures 8 and 9.)  
Read 9-Bits Data with Protect Bit  
The read 9-bit data command operates similarly to read 8-  
bit data command except that the protect bit for each byte  
is output after each 8-bit data and the address for the next  
output data is incremented after every nine clock pulses.  
(See Figure 7.)  
Write Protect Bit with Data Comparison  
The write protect bit with data comparison command  
writes 0 to the corresponding protect bit only if the input  
data and the data in the specified memory location are the  
same. After the protect bit is set to 0 (write protection  
enabled), it cannot be changed again. (See Figure 9.)  
Write/Erase Data Byte without Protect Bit  
The write/erase data byte without protect bit command  
writes the new data into the specified byte location. There  
are three kinds of write/erase operations which are  
automatically executed by the device:  
The execution of write/erase commands are terminated  
after a given number of clock cycles. When the operation  
is done, the device will bring the I/O state to 0. Only RST  
transition from 0 to 1 can set the I/O state back to 1.  
1. Erase and subsequent write if 203 clock pulses at  
f < 20 KHz are applied. (See Figure 8.)  
2. Write only if 103 clock pulses at f < 20 KHz are ap-  
plied. This operation is only suitable if single bits of  
one byte shall be changed only from 1 to 0. (See  
Figure 9.)  
3. Erase only if the input data = FFH and 103 clock  
pulses at f < 20 KHz are applied. (See Figure 9.)  
Note: Erase means 0 1. Write means 1 0.  
6
Integrated Silicon Solution, Inc. 1-800-379-4774  
REV. A  
11/01/01  

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