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IS23SC1604-X5 PDF预览

IS23SC1604-X5

更新时间: 2024-01-06 14:55:31
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
18页 78K
描述
16-KBIT SECURED SERIAL EEPROM

IS23SC1604-X5 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:WAFER
包装说明:DIE,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.88Is Samacsys:N
最大时钟频率 (fCLK):0.3 MHzJESD-30 代码:R-XUUC-N7
JESD-609代码:e0内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:7
字数:2048 words字数代码:2000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:RECTANGULAR封装形式:UNCASED CHIP
并行/串行:SERIAL峰值回流温度(摄氏度):240
认证状态:Not Qualified串行总线类型:3-WIRE
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:30
最长写入周期时间 (tWC):5 msBase Number Matches:1

IS23SC1604-X5 数据手册

 浏览型号IS23SC1604-X5的Datasheet PDF文件第3页浏览型号IS23SC1604-X5的Datasheet PDF文件第4页浏览型号IS23SC1604-X5的Datasheet PDF文件第5页浏览型号IS23SC1604-X5的Datasheet PDF文件第7页浏览型号IS23SC1604-X5的Datasheet PDF文件第8页浏览型号IS23SC1604-X5的Datasheet PDF文件第9页 
®
IS23SC1604  
ISSI  
ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings(1)  
Symbol  
Vcc  
Parameter  
Min.  
–0.3  
–0.3  
–40  
Max.  
6
Unit  
V
Supply Voltage  
VI / VO  
TSTG  
PMAX  
Input/OutputVoltage  
StorageTemperature  
Power Dissipation  
6
V
125  
60  
°C  
mV  
Note:  
1. Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device.  
This is a stress rating only and functional operation of the device at these or any other conditions above those  
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions  
for extended periods may affect reliability.  
Operating Range  
Range  
AmbientTemperature  
0 to +70°C  
Vcc  
5V  
Commercial  
Industrial  
–40 to +85°C  
5V  
Capacitance (1,2)  
Symbol  
Parameter  
Conditions  
VIN = 0V  
Max.  
Unit  
pF  
CIN  
Input Capacitance  
Output Capacitance  
5
8
COUT  
VOUT = 0V  
pF  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25°C, Vcc = 5.0V + 10%; GND = 0V, f = 1 MHz.  
DC Electrical Characteristics(1) (TA = 0°C to 70°C, Vcc = 5.0 + 10%, GND = 0V )  
Symbol  
Vcc  
Parameter  
Test Conditions  
Min.  
5.0  
Typ.  
5.5  
Max.  
V
Unit  
SupplyVoltage  
4.5  
ICC  
SupplyRead/CompareCurrent  
TA = 25°C,  
3.0  
mA  
FCLK = 300 KHz  
ICCP  
Supply Write/Erase Current  
Standby Supply Current  
TA = 25°C  
TA = 25°C,  
4.0  
mA  
µA  
ICCSB  
15.0  
RST = 5V;FUS, CLK, PGM = 0V, IIO = 0 mA  
VIL  
VIH  
VOL  
ILI  
Input Low Level  
–0.3  
2.0  
0.8  
Vcc + 0.3  
0.4  
V
V
Input High Level  
Output Low Level  
Input Leakage Current  
I/O Leakage Current  
IOL = 1 mA  
V
50  
µA  
µA  
ILH  
VOH = 5V Open Drain  
50  
Note:  
1. There is a internal pull-up on pin RST. There are internal pull-downs on pins FUS, CLK, and PGM  
6
Integrated Silicon Solution, Inc. — 1-800-379-4774  
ADVANCEINFORMATION Rev. 00E  
04/10/03  

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