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IRSF3011

更新时间: 2024-11-08 22:33:39
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
12页 487K
描述
FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm)

IRSF3011 数据手册

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Previous Datasheet  
Index  
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Data Sheet No.PD 6.039B  
IRSF3011  
FULLY PROTECTED POWER MOSFET SWITCH  
Features  
V
50V  
ds(clamp)  
· Extremely Rugged for Harsh Operating Environments  
· Over-Temperature Protection  
· Over-Current Protection  
R
200m  
5A  
ds(on)  
· Active Drain-to-Source Clamp  
· ESD Protection  
I
ds(sd)  
T
j(sd)  
155°C  
200mJ  
· Compatible with Standard Power MOSFET  
· Low Operating Input Current  
· Monolithic Construction  
E
AS  
Description  
Applications  
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET  
with built-in short circuit, over-temperature, ESD and over-voltage pro-  
tections.  
· Solenoid Driver  
· DC Motor Driver  
The on-chip protection circuit latches off the power MOSFET in case  
the drain current exceeds 7A or the junction temperature exceeds 165°C  
and keeps it off until the input is driven low. The drain-to-source voltage  
is actively clamped at 55V (typical), prior to the avalanche of POWER  
MOSFET, thus improving its performance during turn-off with inductive  
loads.  
Available Packages  
IRSF3011  
The input current requirements are very low (300µA) which makes the  
IRSF3011 compatible with most existing designs based on standard  
power MOSFETs.  
(TO-220AB)  
IRSF3011L  
(SOT-223)  
IRSF3011 Block Diagram  
To Order  
 
 

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