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Provisional Data Sheet No. PD 6.069A
IRSF3031
FULLY PROTECTED DMOS POWER SWITCH
Features
■ Extremely Rugged for Harsh Operating Environments
■ Over Temperature Protection
■ Over Current Protection
■ Active Drain-to-Source Clamp
■ ESD Protection
■ Compatible with Standard Power MOSFET
■ Low Operating Input Current
■ Monolithic Construction
V
R
50 V
ds(clamp)
200 mΩ
1.8 A
165oC
ds(on)
ds(sd)
I
T
j(sd)
AS
■ Dual Set/Reset Threshold Input
E
200 mJ
Description
The IRSF3031 is a three-terminal monolithic SMART POWER MOS-
FET with built-in short circuit, over-temperature, ESD and over-voltage
protections and dual set/reset threshold input.
Applications
■
■
Solenoid Driver
DC Motor Driver
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 4A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the input is driven below the
Reset Threshold voltage. The drain-to-source voltage is actively
clamped at 55V (typical) prior to the avalanche of the power MOSFET,
thus improving its performance during turn-off with inductive loads.
Available Packages
IRSF3031
(TO-220AB)
The input requirements are very low (100µA typical) which makes the
IRSF3031 compatible with most existing designs based on standard
power MOSFETs.
IRSF3031L
(SOT-223)
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwisespecified.)
Minimum Maximum Units Test Conditions
V
V
Continuous Drain to Source Voltage
Continuous Input Voltage
50
ds, max
V
0
8
in, max
I
Continuous Drain Current
-40
-40
self limited
30
ds
P
E
V
V
Power Dissipation
W
T ≤ 25°C
c
d
Unclamped Single Pulse Inductive Energy
Electrostatic Discharge Voltage (Human Body Model)
Electrostatic Discharge Voltage (Machine Model)
Operating Junction Temperature Range
Storage Temperature Range
200
mJ
AS
4000
1000
150
1000pF. 1.5kΩ
200pF, 0Ω
esd1
esd2
V
T
T
T
Jop
Stg
L
150
°C
Lead Temperature (Soldering, 10 seconds)
300
To Order