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IRSF3031LTR PDF预览

IRSF3031LTR

更新时间: 2024-09-15 13:08:55
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页数 文件大小 规格书
5页 279K
描述
Buffer/Inverter Based Peripheral Driver, PDSO4, SOT-223, 3 PIN

IRSF3031LTR 数据手册

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Previous Datasheet  
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Provisional Data Sheet No. PD 6.069A  
IRSF3031  
FULLY PROTECTED DMOS POWER SWITCH  
Features  
Extremely Rugged for Harsh Operating Environments  
Over Temperature Protection  
Over Current Protection  
Active Drain-to-Source Clamp  
ESD Protection  
Compatible with Standard Power MOSFET  
Low Operating Input Current  
Monolithic Construction  
V
R
50 V  
ds(clamp)  
200 mΩ  
1.8 A  
165oC  
ds(on)  
ds(sd)  
I
T
j(sd)  
AS  
Dual Set/Reset Threshold Input  
E
200 mJ  
Description  
The IRSF3031 is a three-terminal monolithic SMART POWER MOS-  
FET with built-in short circuit, over-temperature, ESD and over-voltage  
protections and dual set/reset threshold input.  
Applications  
Solenoid Driver  
DC Motor Driver  
The on-chip protection circuit latches off the power MOSFET in case  
the drain current exceeds 4A (typical) or the junction temperature ex-  
ceeds 165°C (typical) and keeps it off until the input is driven below the  
Reset Threshold voltage. The drain-to-source voltage is actively  
clamped at 55V (typical) prior to the avalanche of the power MOSFET,  
thus improving its performance during turn-off with inductive loads.  
Available Packages  
IRSF3031  
(TO-220AB)  
The input requirements are very low (100µA typical) which makes the  
IRSF3031 compatible with most existing designs based on standard  
power MOSFETs.  
IRSF3031L  
(SOT-223)  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless  
otherwisespecified.)  
Minimum Maximum Units Test Conditions  
V
V
Continuous Drain to Source Voltage  
Continuous Input Voltage  
—
50  
ds, max  
V
0
8
in, max  
I
Continuous Drain Current  
—
—
—
—
—
-40  
-40  
—
self limited  
30  
ds  
P
E
V
V
Power Dissipation  
W
T 25°C  
c
d
Unclamped Single Pulse Inductive Energy  
Electrostatic Discharge Voltage (Human Body Model)  
Electrostatic Discharge Voltage (Machine Model)  
Operating Junction Temperature Range  
Storage Temperature Range  
200  
mJ  
AS  
4000  
1000  
150  
1000pF. 1.5kΩ  
200pF, 0Ω  
esd1  
esd2  
V
T
T
T
Jop  
Stg  
L
150  
°C  
Lead Temperature (Soldering, 10 seconds)  
300  
To Order  
 
 

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