Datasheet > IRS2509SPBF

IRS2509SPBF

更新时间： 2024-12-02 00:33:03

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动
页数	文件大小	规格书
21页	628K
描述
HALF-BRIDGE DRIVER

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数据手册

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IRS2509SPBF 数据手册

November 15, 2010

IRS2509SPbF

HALF-BRIDGE DRIVER

Features

Packages



600V half-bridge driver



Tolerant to negative transient voltages

Gate drive supply range from 10 V to 20 V

Under-voltage lock-out for both channels

3.3 V, 5 V and 15 V input logic compatible

Cross-conduction prevention logic

Matched propagation delay for both channels

High side output in phase with IN input

Internal 530 ns dead-time

8-Lead SOIC

Product Summary

Lower di/dt gate driver for better noise immunity

Shut down input turns off both channels

RoHS compliant

V_OFFSET

I_O+/-

V_OUT

t_on/off(typ.)

Dead Time

600 V max.

120 mA / 250 mA

10 V – 20 V

750 ns & 200 ns

530 ns

Description

Applications:

The IRS2509 is a high-voltage, high-speed power MOSFET

and IGBT half-bridge driver with independent high and low

side referenced output channels. Proprietary HVIC and latch

immune CMOS technologies enable a ruggedized monolithic

construction. The logic input is compatible with standard

CMOS or LSTTL output, down to 3.3 V. The output drivers

feature a high pulse current buffer stage designed for minimum

driver cross-conduction. The floating channel can be used to

drive an N-channel power MOSFET or IGBT in the high side

configuration which operates up to 600V.

*HID Electronic Ballasts

Typical Connection

12 3 4 5 6 7...21

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