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IRS2509SPBF_15 PDF预览

IRS2509SPBF_15

更新时间: 2024-02-15 05:57:59
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动
页数 文件大小 规格书
21页 628K
描述
HALF-BRIDGE DRIVER

IRS2509SPBF_15 数据手册

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November 15, 2010  
IRS2509SPbF  
HALF-BRIDGE DRIVER  
Features  
Packages  
600V half-bridge driver  
Tolerant to negative transient voltages  
Gate drive supply range from 10 V to 20 V  
Under-voltage lock-out for both channels  
3.3 V, 5 V and 15 V input logic compatible  
Cross-conduction prevention logic  
Matched propagation delay for both channels  
High side output in phase with IN input  
Internal 530 ns dead-time  
8-Lead SOIC  
Product Summary  
Lower di/dt gate driver for better noise immunity  
Shut down input turns off both channels  
RoHS compliant  
VOFFSET  
IO+/-  
VOUT  
ton/off (typ.)  
Dead Time  
600 V max.  
120 mA / 250 mA  
10 V – 20 V  
750 ns & 200 ns  
530 ns  
Description  
Applications:  
The IRS2509 is a high-voltage, high-speed power MOSFET  
and IGBT half-bridge driver with independent high and low  
side referenced output channels. Proprietary HVIC and latch  
immune CMOS technologies enable a ruggedized monolithic  
construction. The logic input is compatible with standard  
CMOS or LSTTL output, down to 3.3 V. The output drivers  
feature a high pulse current buffer stage designed for minimum  
driver cross-conduction. The floating channel can be used to  
drive an N-channel power MOSFET or IGBT in the high side  
configuration which operates up to 600V.  
*HID Electronic Ballasts  
Typical Connection  

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