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IRS21363DSTRPBF PDF预览

IRS21363DSTRPBF

更新时间: 2024-10-14 14:51:39
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
23页 613K
描述
MOSFET Driver, PDSO28

IRS21363DSTRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOP, SOP28,.4Reach Compliance Code:compliant
风险等级:5.84JESD-30 代码:R-PDSO-G28
端子数量:28最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP28,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:15 V认证状态:Not Qualified
子类别:MOSFET Drivers标称供电电压:15 V
表面贴装:YES温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

IRS21363DSTRPBF 数据手册

 浏览型号IRS21363DSTRPBF的Datasheet PDF文件第2页浏览型号IRS21363DSTRPBF的Datasheet PDF文件第3页浏览型号IRS21363DSTRPBF的Datasheet PDF文件第4页浏览型号IRS21363DSTRPBF的Datasheet PDF文件第5页浏览型号IRS21363DSTRPBF的Datasheet PDF文件第6页浏览型号IRS21363DSTRPBF的Datasheet PDF文件第7页 
Data Sheet No. PD60247revD  
PRELIMINARY  
IRS2136D/IRS21362D/IRS21363D/IRS21365D/  
IRS21366D/IRS21367D/IRS21368D (J&S) PBF  
3-PHASE BRIDGE DRIVER  
Packages  
Features  
Floating channel designed for bootstrap operation  
Fully operational to +600 V  
Tolerant to negative transient voltage, dV/dt immune  
Gate drive supply range from 10 V to 20 V (IRS2136D/  
IRS21368D), 11.5 V to 20 V (IRS21362D), or 12 V to 20 V  
(IRS21363D/IRS21365D/IRS21366D/IRS21367D  
Undervoltage lockout for all channels  
Over-current shutdown turns off all six drivers  
Independent 3 half-bridge drivers  
Matched propagation delay for all channels  
Cross-conduction prevention logic  
28-Lead SOIC  
28-Lead PDIP  
44-Lead PLCC w/o 12 Leads  
Integrated bootstrap diode function  
Low side output out of phase with inputs. High side outputs  
out of phase (IRS213(6,63, 65, 66, 67, 68)D), or in phase  
(IRS21362D) with inputs  
Applications:  
*Motor Control  
*Air Conditioners/ Washing Machines  
*General Purpose Inverters  
*Micro/Mini Inverter Drives  
3.3 V logic compatible  
Lower di/dt gate drive for better noise immunity  
Externally programmable delay for automatic fault clear  
All parts are LEAD-FREE  
Description  
Feature Comparison:  
IRS2136xD  
The IRS2136xD (J&S) are high voltage, high  
speed power MOSFET and IGBT driver with  
three independent high side and low side  
referenced output channels for 3-phase  
applications. Proprietary HVIC technology  
enables ruggedized monolithic construction.  
Logic inputs are compatible with CMOS or  
LSTTL outputs, down to 3.3 V logic. A  
current trip function which terminates all six  
outputs can be derived from an external  
current sense resistor. An enable function is  
available to terminate all six outputs  
simultaneously. An open-drain FAULT signal  
Part  
IRS2136D  
IRS21362D  
IRS21363D  
IRS21365D  
IRS21366D  
IRS21367D  
IRS21368D  
___ ___  
HIN, LIN  
___  
___ ___  
HIN, LIN  
___ ___  
HIN, LIN  
___ ___  
HIN, LIN  
___ ___  
HIN, LIN  
___ ___  
HIN, LIN  
Input Logic  
HIN, LIN  
ton (typ.)  
toff (typ.)  
530 ns  
530 ns  
530 ns  
530 ns  
530 ns  
530 ns  
530 ns  
530 ns  
200 ns  
200 ns  
200 ns  
200 ns  
530 ns  
530 ns  
VIH (min.)  
VIL (max.)  
VITRIP+  
2.5 V  
0.8 V  
2.5 V  
0.8 V  
2.5 V  
0.8 V  
2.5 V  
0.8 V  
4.3 V  
2.5 V  
0.8 V  
2.5 V  
0.8 V  
4.3 V  
2.5 V  
0.8 V  
4.3 V  
0.46 V  
0.46 V  
0.46 V  
0.46 V  
VCCUV+  
VBSUV+  
/
8.9 V  
8.2 V  
10.4 V  
9.4 V  
11.1 V  
10.9 V  
11.1 V  
10.9 V  
11.1 V  
10.9 V  
11.1 V  
10.9 V  
8.9 V  
8.2 V  
VCCUV-  
/
VBSUV-  
is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault conditions are cleared  
automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high  
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high  
frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side  
configuration which operates up to 600 V.  
Typical Connection  
www.irf.com  
1

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