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IRS2011

更新时间: 2024-11-27 21:15:43
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
9页 288K
描述
MOSFET Driver, CMOS, PDIP8,

IRS2011 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP, DIP8,.3Reach Compliance Code:unknown
风险等级:5.57JESD-30 代码:R-PDIP-T8
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
电源:15 V认证状态:Not Qualified
子类别:MOSFET Drivers标称供电电压:15 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

IRS2011 数据手册

 浏览型号IRS2011的Datasheet PDF文件第2页浏览型号IRS2011的Datasheet PDF文件第3页浏览型号IRS2011的Datasheet PDF文件第4页浏览型号IRS2011的Datasheet PDF文件第5页浏览型号IRS2011的Datasheet PDF文件第6页浏览型号IRS2011的Datasheet PDF文件第7页 
Application Note AN-1097  
IRS2011 and IR2011 Comparison  
By Jason Nguyen, Min Fang, David New  
Table of Contents  
Page  
Introduction ..........................................................................................1  
Block Diagram......................................................................................2  
Electrical Characteristic Differences.....................................................3  
Figures .................................................................................................3  
Summary..............................................................................................9  
Introduction  
The IRS2011 is a new HVIC product that replaces the IR2011 and is pin-to-pin compatible  
with its predecessor. This application note describes the various differences between the  
IRS2011 and the IR2011 HVICs.  
The IRS2011 is a high power, high speed power MOSFET driver with independent high  
and low side referenced output channels, ideal for Class D Audio and DC-DC converter  
applications. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to  
3.0 V logic. The output drivers feature a high pulse current buffer stage designed for  
minimum driver cross-conduction. Propagation delays are matched to simplify its use in  
high frequency applications. The floating channel can be used to drive an N-channel  
power MOSFET in the high side configuration which operates up to 200 V. Proprietary  
HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.  
AN-1097  
www.irf.com  
1

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