Datasheet > IRLI3803-017PBF

IRLI3803-017PBF

更新时间： 2024-09-30 20:55:31

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关晶体管
页数	文件大小	规格书
9页	108K
描述
Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRLI3803-017PBF 数据手册

PD - 9.1320B

IRLI3803

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Ultra Low On-Resistance

l Isolated Package

V_DSS= 30V

R_DS(on)= 0.006Ω

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

I_D= 76A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 Fullpak eliminates the need for additional

insulatinghardwareincommercial-industrialapplications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

andexternalheatsink. Thisisolationisequivalenttousing

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 5.0V

Pulsed Drain Current

470

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.42

±16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

610

E_AR

dv/dt

T_J

Repetitive Avalanche Current

Peak Diode Recovery dv/dt

Operating Junction and

6.3

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

°C

300 (1.6mm from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Min.

––––

Typ.

––––

Max.

2.4

Units

R_θJC

R_θJA

°C/W

8/25/97

12 3 4 5 6 7...9

中文翻译

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与IRLI3803-017PBF相关器件

型号	品牌	获取价格	描述	数据表
IRLI3803-018PBF	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-019	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-019PBF	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-024	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-024PBF	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-029	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-029PBF	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-030	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-030PBF	INFINEON	获取价格	Power Field-Effect Transistor, 67A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
IRLI3803-031PBF	INFINEON	获取价格	暂无描述

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