IRLI520

更新时间： 2024-09-29 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	39K
描述
Power MOSFET

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中文翻译

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数据手册

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IRLI520 数据手册

PD - 9.1496A

IRLI520N

PRELIMINARY

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Isolated Package

V_DSS= 100V

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

R_DS(on)= 0.18Ω

I_D=8.1A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 Fullpak eliminates the need for additional

insulatinghardwareincommercial-industrialapplications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

andexternalheatsink. Thisisolationisequivalenttousing

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

8.1

5.7

P_D@T_C= 25°C

Power Dissipation

0.20

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

Single Pulse Avalanche Energy

Avalanche Current

6.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

3.0

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

5.0

Units

R_θJC

R_θJA

°C/W

–––

3/16/98

中文翻译

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与IRLI520相关器件

型号	品牌	获取价格	描述	数据表
IRLI520A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLI520ATU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Me
IRLI520G	VISHAY	获取价格	Power MOSFET
IRLI520G	INFINEON	获取价格	HEXFET-R POWER MOSFET
IRLI520G-002	VISHAY	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRLI520G-002PBF	VISHAY	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRLI520G-003	VISHAY	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRLI520G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRLI520G-004	VISHAY	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me
IRLI520G-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me