IRLI3103PBF

更新时间： 2024-09-29 13:00:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
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IRLI3103PBF 数据手册

PD 9.1377

IRLI3103

PRELIMINARY

HEXFET^®Power MOSFET

Logic-Level Gate Drive

Advanced Process Technology

Isolated Package

High Voltage Isolation = 2.5KVRMS

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

V_DSS= 30V

R_DS(on)= 0.014Ω

I_D= 38A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V _GS@ 10V

Pulsed Drain Current

220

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.25

± 20

240

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

3.8

V/ns

2.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

4.0

Units

R_θJC

R_θJA

°C/W

–––

12 3 4 5 6 7 8

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