Datasheet > IRLI3215PBF

IRLI3215PBF

更新时间： 2024-09-29 11:10:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	219K
描述
Advanced Process Technology

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IRLI3215PBF 数据手册

PD - 95043

IRLI3215PbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 150V

_DS(on)= 0.166 Ω

l Fully Avalanche Rated

l Lead-Free

I_D= 12Aꢀ

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in

commercial-industrial applications. The moulding compound used provides a

high isolation capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100 micron mica barrier

with standard TO-220 product. The Fullpak is mounted to a heatsink using a

single clip or by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

12 ꢀ

8.5

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.53

±16

130

7.2

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

8.0

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

1.9

Units

R_θJC

R_θJA

°C/W

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2/24/04

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