IRLI3705N

更新时间： 2024-09-28 22:23:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	109K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRLI3705N 数据手册

PD - 9.1369B

IRLI3705N

HEXFET^®Power MOSFET

l Logic-Level Gate Drive

l Advanced Process Technology

l Isolated Package

V_DSS= 55V

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

R_DS(on)= 0.01Ω

I_D= 52A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 Fullpak eliminates the need for additional

insulatinghardwareincommercial-industrialapplications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

andexternalheatsink. Thisisolationisequivalenttousing

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

310

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.39

± 16

340

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.8

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.6

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

8/25/97

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRLI3705N相关器件

型号	品牌	获取价格	描述	数据表
IRLI3705N-002	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-003	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-004	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-006	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-009	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-009PBF	INFINEON	获取价格	47A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRLI3705N-010	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRLI3705N-010PBF	INFINEON	获取价格	Power Field-Effect Transistor, 47A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta

与IRLI3705N相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

27
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

23
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

22
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLI3705N

IRLI3705N 数据手册

与IRLI3705N相关器件

与IRLI3705N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRLI3705N

IRLI3705N 数据手册

与IRLI3705N相关器件

与IRLI3705N相关文章

您还可以找

您在本页遇到什么问题？