IRKTF102-12CPN

更新时间： 2024-11-29 13:02:23

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IRKTF102-12CPN 数据手册

Bulletin I27097 rev. A 09/97

IRK.F102.. SERIES

INT-A-pakä Power Modules

FAST THYRISTOR/ DIODE and

THYRISTOR/THYRISTOR

Features

Fast turn-off thyristor

105 A

Fast recovery diode

High surge capability

Electrically isolated baseplate

3000 V_RMSisolating voltage

Industrial standard package

UL E78996 approved

Description

These series of INT-A-pak modules are intended for

applications such as self-commutated inverters, DC

choppers, electronic welders, induction heating and

others where fast switching characteristics are required.

Major Ratings and Characteristics

Parameters

I _T(AV)

IRK.F102..

105

Units

°C

@ T_C

I_T(RMS)

I_TSM

233

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

2850

3000

I t

40.8

KA s

37.2

KA s

I √t

408

KA √s

20and 25

µs

V_DRM/V_RRM

upto1200

-40to125

T_J

range

www.irf.com

12 3 4 5 6 7 8

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与IRKTF102-12CPN相关器件

型号	品牌	获取价格	描述	数据表
IRKTF102-12DJ	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM),
IRKTF102-12DK	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM),
IRKTF102-12DKN	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element
IRKTF102-12DP	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM),
IRKTF102-12DPN	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element
IRKTF102-12EJ	ETC	获取价格	THYRISTOR MODULE\|SCR DOUBLER\|1.2KV V(RRM)\|105A I(T)
IRKTF102-12EJN	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element
IRKTF102-12EK	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM),
IRKTF102-12EKN	INFINEON	获取价格	暂无描述
IRKTF102-12EP	INFINEON	获取价格	Silicon Controlled Rectifier, 164.85A I(T)RMS, 105000mA I(T), 1200V V(DRM), 1200V V(RRM),