型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFZ42-010 | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ42-010PBF | INFINEON |
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50A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRFZ42-011PBF | INFINEON |
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Power Field-Effect Transistor, 50A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ42-012PBF | INFINEON |
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50A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRFZ42-013 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Met | |
IRFZ42-013PBF | INFINEON |
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50A, 50V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRFZ44 | VISHAY |
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Power MOSFET | |
IRFZ44 | NXP |
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N-channel enhancement mode TrenchMOS transistor | |
IRFZ44 | INFINEON |
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Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A) | |
IRFZ44 | SAMSUNG |
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N-CHANNEL POWER MOSFETS |