Datasheet > IRFI9Z24N

IRFI9Z24N

更新时间： 2024-11-04 22:26:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	121K
描述
HEXFET Power MOSFET

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中文翻译

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IRFI9Z24N 数据手册

PD - 9.1529A

IRFI9Z24N

HEXFET^®Power MOSFET

^lAdvanced Process Technology

l Isolated Package

V_DSS= -55V

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l P-Channel

R_DS(on)= 0.175Ω

l Fully Avalanche Rated

Description

I_D= -9.5A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

TheTO-220Fullpakeliminatestheneedforadditional

insulating hardware in commercial-industrial

applications. Themouldingcompoundusedprovides

ahighisolationcapabilityandalowthermalresistance

between the tab and external heatsink. This isolation

is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to

a heatsink using a single clip or by a single screw

fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

- 9.5

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

- 6.7

- 48

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.19

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

-7.2

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

2.9

- 5.0

-55 to + 175

V/ns

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

5.2

Units

R_θJC

R_θJA

°C/W

–––

8/25/97

12 3 4 5 6 7 8

中文翻译

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与IRFI9Z24N相关器件

型号	品牌	获取价格	描述	数据表
IRFI9Z34G	VISHAY	获取价格	Power MOSFET
IRFI9Z34G	INFINEON	获取价格	HEXFET POWER MOSFET
IRFI9Z34G-002	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-003PBF	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-004	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-004PBF	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-005	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-006PBF	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-009	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta
IRFI9Z34G-009PBF	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta

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