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IRFI720G-019 PDF预览

IRFI720G-019

更新时间: 2024-11-30 06:44:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI720G-019 数据手册

  

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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI720G-030 INFINEON

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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI720G-030PBF INFINEON

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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI720G-031 INFINEON

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Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met
IRFI720GPBF INFINEON

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HEXFET Power MOSFET
IRFI720GPBF VISHAY

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Power MOSFET