Datasheet > IRFD1Z1

IRFD1Z1

更新时间： 2024-09-24 22:29:03

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
6页	61K
描述
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs

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IRFD1Z1 数据手册

IRFD1Z0, IRFD1Z1,

IRFD1Z2, IRFD1Z3

Semiconductor

0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,

N-Channel Power MOSFETs

July 1998

Features

Description

• 0.4A and 0.5A, 60V and 100V

• r = 2.4Ω and 3.2Ω

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA17451.

• Majority Carrier Device

Symbol

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

IRFD1Z0

PACKAGE

HEXDIP

BRAND

IRFD1Z0

IRFD1Z1

HEXDIP

IRFD1Z1

IRFD1Z2

IRFD1Z3

IRFD1Z2

IRFD1Z3

NOTE: When ordering, use the entire part number.

Packaging

HEXDIP

DRAIN

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 2313.1

5-1

12 3 4 5 6

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与IRFD1Z1相关器件

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IRFD1Z2	INTERSIL	获取价格	0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
IRFD1Z3	INTERSIL	获取价格	0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
IRFD210	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
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