Datasheet > IRF9Z24NSTRLPBF

IRF9Z24NSTRLPBF

更新时间： 2024-11-21 21:16:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	178K
描述
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRF9Z24NSTRLPBF 数据手册

PD - 91742A

IRF9Z24NS/L

HEXFET^®Power MOSFET

Advanced Process Technology

Surface Mount (IRF9Z24NS)

Low-profile through-hole (IRF9Z24NL)

175°C Operating Temperature

P-Channel

V_DSS= -55V

R_DS(on)= 0.175Ω

Fast Switching

Fully Avalanche Rated

I_D= -12A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z24NL) is available for

low-profile applications.

T O -262

Pak

Absolute Maximum Ratings

Parameter

Max.

-12

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10Vꢀ

Pulsed Drain Current ꢀ

-8.5

-48

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

3.8

Power Dissipation

Linear Derating Factor

0.30

± 20

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

-7.2

4.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

3.3

Units

R_θJC

°C/W

R_θJA

–––

www.irf.com

7/16/99

12 3 4 5 6 7...11

中文翻译

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IRF9Z24NSTRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF9Z24NSTRL	INFINEON	类似代替	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24NSPBF	INFINEON	类似代替	HEXFET Power MOSFET
IRF9Z24NS	INFINEON	类似代替	Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

与IRF9Z24NSTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF9Z24NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Met
IRF9Z24PBF	INFINEON	获取价格	power mosfet
IRF9Z24PBF	VISHAY	获取价格	Power MOSFET
IRF9Z24S	VISHAY	获取价格	Power MOSFET
IRF9Z24S	INFINEON	获取价格	Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
IRF9Z24SPBF	VISHAY	获取价格	Power MOSFET
IRF9Z24SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Meta
IRF9Z24STRL	VISHAY	获取价格	Power MOSFET
IRF9Z24STRL	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Meta

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