是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
风险等级: | 5.24 | 雪崩能效等级(Eas): | 520 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 125 W |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 33 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 111 ns |
最大开启时间(吨): | 62 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF742R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-220AB | |
IRF743 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 10A, 350V/400V | |
IRF743 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF743-001 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF743-002 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF743-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF743-003 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF743-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF743-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF743-005PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |