Datasheet > IRF540S, SiHF540S

IRF540S, SiHF540S

更新时间： 2023-12-06 20:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	211K
描述
Power MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF540S, SiHF540S 数据手册

浏览型号IRF540S, SiHF540S的Datasheet PDF文件第3页

浏览型号IRF540S, SiHF540S的Datasheet PDF文件第4页

浏览型号IRF540S, SiHF540S的Datasheet PDF文件第5页

浏览型号IRF540S, SiHF540S的Datasheet PDF文件第7页

浏览型号IRF540S, SiHF540S的Datasheet PDF文件第8页

IRF540S, SiHF540S

www.vishay.com

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T.

• Low leakage inductance

current transformer

R_g

• dV/dt controlled by R_g

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor “D”

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

D =

Period

V_GS= 10 V^a

D.U.T. l_SDwaveform

D.U.T. V_DSwaveform

Reverse

recovery

current

Body diode forward

current

dI/dt

Diode recovery

dV/dt

V_DD

Re-applied

voltage

Body diode forward drop

Inductor current

I_SD

Ripple ≤ 5 %

Note

a. V_GS= 5 V for logic level devices

Fig. 14 - For N-Channel



Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91022.

S20-0683-Rev. E, 07-Sep-2020

Document Number: 91022

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1...3 4 567 8 9

下载PDF

与IRF540S, SiHF540S相关器件

型号	品牌	描述	获取价格	数据表
IRF540SPBF	INFINEON	HEXFET㈢ Power MOSFET	获取价格
IRF540SPBF	VISHAY	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me	获取价格
IRF540STRLPBF	VISHAY	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me	获取价格
IRF540T	MOTOROLA	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me	获取价格
IRF540U	MOTOROLA	28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格
IRF540U2	MOTOROLA	28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	获取价格