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IRF540Z PDF预览

IRF540Z

更新时间: 2024-02-23 05:33:12
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 301K
描述
AUTOMOTIVE MOSFET

IRF540Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:LEAD FREE, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.25
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):36 A
最大漏极电流 (ID):36 A最大漏源导通电阻:0.0265 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):92 W最大脉冲漏极电流 (IDM):140 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON

IRF540Z 数据手册

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PD - 94758  
IRF540Z  
IRF540ZS  
IRF540ZL  
AUTOMOTIVE MOSFET  
Features  
HEXFET® Power MOSFET  
Advanced Process Technology  
D
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
VDSS = 100V  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 26.5mΩ  
G
Description  
ID = 36A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
D2Pak  
TO-262  
IRF540ZL  
TO-220AB  
IRF540Z  
IRF540ZS  
Absolute Maximum Ratings  
Parameter  
Max.  
36  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
25  
A
140  
92  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.61  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
83  
120  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.64  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
www.irf.com  
1
10/31/03  

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