型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF333 | SAMSUNG |
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N-CHANNEL POWER MOSFETS | |
IRF333 | VISHAY |
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Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRF333 | FAIRCHILD |
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N-Channel Power MOSFETs, 5.5A, 350 V/400V | |
IRF333 | NJSEMI |
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Trans MOSFET N-CH 350V 4.5A 3-Pin (2+Tab) TO-3 | |
IRF-333+/-10% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LE | |
IRF-3330+/-10% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 330 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL L | |
IRF-333010% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 330 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-3330UH+-10%B08 | VISHAY |
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General Purpose Inductor, 330uH, 10%, Ferrite-Core, | |
IRF-3330UH+-10%EBE2 | VISHAY |
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General Purpose Inductor, 330uH, 10%, Ferrite-Core, | |
IRF-3330UH+-10%ESE2 | VISHAY |
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General Purpose Inductor, 330uH, 10%, Ferrite-Core, |