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IRF333 PDF预览

IRF333

更新时间: 2024-11-30 20:27:55
品牌 Logo 应用领域
威世 - VISHAY 局域网脉冲晶体管
页数 文件大小 规格书
1页 107K
描述
Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

IRF333 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:unknown风险等级:5.75
配置:SINGLE最小漏源击穿电压:350 V
最大漏极电流 (ID):4.5 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-204
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

IRF333 数据手册

  

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