生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 180 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (ID): | 6.5 A |
最大漏源导通电阻: | 0.68 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 最大脉冲漏极电流 (IDM): | 26 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 76 ns | 最大开启时间(吨): | 49 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF236 | INTERSIL |
获取价格 |
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs | |
IRF236R | RENESAS |
获取价格 |
8.1A, 275V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
IRF237 | INTERSIL |
获取价格 |
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs | |
IRF237R | RENESAS |
获取价格 |
6.5A, 275V, 0.68ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
IRF-24 | VISHAY |
获取价格 |
Inductors | |
IRF-24.12UH20% | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 0.12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-24.18UH20% | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 0.18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-24.1UH20% | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 0.1 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-24.22UH20% | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 0.22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-24.33UH20% | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR |